ZXTN2011GTA vs ZXTN2011 vs ZXTN2011G

 
PartNumberZXTN2011GTAZXTN2011ZXTN2011G
DescriptionBipolar Transistors - BJT 100V NPN Med PowerTransistor: NPN, bipolar, 100V, 6A, 3W, SOT223
ManufacturerDiodes IncorporatedZETEXZETEX
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-4--
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO200 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current6 A6 A6 A
Gain Bandwidth Product fT130 MHz130 MHz130 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesZXTN201ZXTN201ZXTN201
Height1.65 mm--
Length6.7 mm--
PackagingReelReelReel
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current6 A6 A6 A
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz0.000282 oz
Package Case-SOT-223SOT-223
Pd Power Dissipation-3 W3 W
Collector Emitter Voltage VCEO Max-100 V100 V
Collector Base Voltage VCBO-200 V200 V
Emitter Base Voltage VEBO-7 V7 V
DC Collector Base Gain hfe Min-100 at 10 mA at 2 V 100 at 2 A at 2 V 30 at 5 A at 2 V 10 at 10 A at 2 V100 at 10 mA at 2 V 100 at 2 A at 2 V 30 at 5 A at 2 V 10 at 10 A at 2 V
DC Current Gain hFE Max-100100
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