ZXTP2006E6TA vs ZXTP2008 vs ZXTP2006E6TA-CUT TAPE

 
PartNumberZXTP2006E6TAZXTP2008ZXTP2006E6TA-CUT TAPE
DescriptionBipolar Transistors - BJT 20V PNP Low Sat
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-6--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO25 V--
Emitter Base Voltage VEBO7.5 V--
Collector Emitter Saturation Voltage- 110 mV--
Maximum DC Collector Current3.5 A5.5 A-
Gain Bandwidth Product fT110 MHz110 MHz-
SeriesZXTP200ZXTP2008-
DC Current Gain hFE Max900300-
Height1.3 mm--
Length3.1 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.8 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 3.5 A- 5.5 A-
DC Collector/Base Gain hfe Min300--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000229 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-3W-
Transistor Type-PNP-
Current Collector Ic Max-5.5A-
Voltage Collector Emitter Breakdown Max-30V-
DC Current Gain hFE Min Ic Vce-100 @ 1A, 1V-
Vce Saturation Max Ib Ic-210mV @ 500mA, 5.5A-
Current Collector Cutoff Max-20nA (ICBO)-
Frequency Transition-110MHz-
Pd Power Dissipation-3 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-- 50 V-
Emitter Base Voltage VEBO-7 V-
DC Collector Base Gain hfe Min-100-
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