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TRS6E65C,S1AQ(S

TRS6E65C,S1AQ(S
Mfr. #:
TRS6E65C,S1AQ(S
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers SiC Schottky Diode
Lifecycle:
New from this manufacturer.
Datasheet:
TRS6E65C,S1AQ(S Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TRS6E65C,S1AQ(S more Information
Product Attribute
Attribute Value
Manufacturer:
Toshiba
Product Category:
Schottky Diodes & Rectifiers
RoHS:
Y
Product:
Schottky Silicon Carbide Diodes
Mounting Style:
Through Hole
Package / Case:
TO-220-2L
If - Forward Current:
6 A
Vrrm - Repetitive Reverse Voltage:
650 V
Vf - Forward Voltage:
1.5 V
Ifsm - Forward Surge Current:
80 A
Configuration:
Single
Technology:
SiC
Ir - Reverse Current:
90 uA
Maximum Operating Temperature:
+ 175 C
Series:
TRS6E65C
Brand:
Toshiba
Product Type:
Schottky Diodes & Rectifiers
Factory Pack Quantity:
50
Subcategory:
Diodes & Rectifiers
Vr - Reverse Voltage:
650 V
Tags
TRS6E65C,S, TRS6E65C, TRS6E, TRS6, TRS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diode
Toshiba SiC Schottky Barrier Diode are fabricated using silicon carbide (SiC), a wide-bandgap semiconductor, to provide high breakdown voltage that has never been possible with silicon (Si) SBDs. Being unipolar devices, SiC SBDs have very short reverse recovery time and temperature-independent switching behavior, making them the ideal replacements for Si fast-recovery diodes (FRDs) to improve power supply efficiency.Learn More
Part # Mfg. Description Stock Price
TRS6E65C,S1AQ
DISTI # TRS6E65CS1AQ-ND		 Toshiba America Electronic Components DIODE SCHOTTKY 650V 6A TO220-2L
RoHS: Compliant
Min Qty: 50
Container: Tube		 Limited Supply - Call
  • 50:$6.4576
TRS6E65C,S1AQ(S
DISTI # 757-TRS6E65CS1AQS		 Toshiba America Electronic Components Schottky Diodes & Rectifiers SiC Schottky Diode
RoHS: Compliant		 82
  • 1:$7.5000
  • 10:$6.7600
  • 50:$6.1600
  • 100:$5.5600
  • 250:$5.1100
  • 500:$4.6500
  • 1000:$4.0600
TRS6E65C,S1AQ(S
DISTI # 8962619		 Toshiba America Electronic Components DIODESIC SBD650V/6ATO220-2, EA 5
  • 1:£5.0600
  • 5:£4.8000
  • 10:£4.5500
  • 25:£4.3500
  • 50:£4.1500
TRS6E65C,S1Q Toshiba America Electronic Components Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 6A
RoHS: Compliant		 Americas -
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    Availability
    Stock:
    72
    On Order:
    2055
    Enter Quantity:
    Current price of TRS6E65C,S1AQ(S is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $7.50
    $7.50
    10
    $6.76
    $67.60
    50
    $6.16
    $308.00
    100
    $5.56
    $556.00
    250
    $5.11
    $1 277.50
    500
    $4.65
    $2 325.00
    1000
    $4.06
    $4 060.00
    2500
    $3.91
    $9 775.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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