Transphorm’s latest Gen III GaN FET offers high-reliability, high-efficiency, high-voltage power conversion in an easy-to-drive automotive-qualified device.
Transphorm's TP65H050WS and TP65H035WS Gen III GaN FETs feature increased noise immunity and increased gate reliability resulting in quiet switching.
Transphorm's TP65H035WS cascode GaN FET offers superior reliability, performance, and improved efficiency over silicon.
Transphorm's 4 kW totem-pole power factor correction (PFC) GaN evaluation board is ideal for data center and broad industrial power supply applications.
Transphorm's 2.5 kW bridgeless totem-pole power factor correction (PFC) GaN evaluation platform features the TPH3212PS 650 V 72 mΩ GaN FET.
The TDHBG2500P100 half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 65
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