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NSVMMBT2222AM3T5G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
March, 2017 − Rev. 2
1 Publication Order Number:
MMBT2222AM3/D
MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MMBT2222AM3T5G SOT−723
(Pb−Free)
8000/Tape &
Reel
COLLECTOR
3
1
BASE
2
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−723
CASE 631AA
STYLE 1
1
2
3
AA M
AA = Specific Device Code
M = Date Code
MARKING
DIAGRAM
NSVMMBT2222AM3T5G SOT−723
(Pb−Free)
8000/Tape &
Reel
MMBT2222AM3T5G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0) V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0)
V
(BR)CBO
75 − Vdc
Emitter−Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) I
CEX
− 10 nAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
I
CBO
−
−
0.01
10
mAdc
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0) I
EBO
− 100 nAdc
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc) I
BL
− 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 3)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 3)
h
FE
35
50
75
35
100
50
40
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.3
1.0
Vdc
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 −
MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
− 8.0 pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
− 25 pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
ie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
re
−
−
8.0
4.0
X 10
−4
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
50
75
300
375
−
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
oe
5.0
25
35
200
mmhos
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
rb, C
c
− 150
ps
Noise Figure (I
C
= 100 mAdc, V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE(off)
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 10
ns
Rise Time t
r
− 25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 60
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
MMBT2222AM3T5G
www.onsemi.com
3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V
< 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
C
S
* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
C
S
* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
h
FE
, DC CURRENT GAIN
T
J
= 125°C
25°C
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
T
J
= 25°C
I
C
= 1.0 mA
10 mA 150 mA
500 mA
P1-P3P4-P6

NSVMMBT2222AM3T5G

Mfr. #:
Buy NSVMMBT2222AM3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR
Lifecycle:
New from this manufacturer.
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