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BTA201-600E/L01EP

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
22 September 2016 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series E" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct triggering from low power drivers and logic ICs
• High commutation capability with sensitive gate
• High immunity to false turn-on by dV/dt
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Sensitive gate for easy logic level triggering
• Triggering in three quadrants only
3. Applications
• General purpose motor control
• Small loads in washing machines
• Solenoid drivers
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤ 54 °C; Fig. 1;
Fig. 2; Fig. 3
- - 1 A
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
1 - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
1 - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
1 - 10 mA
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
BTA201-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T2 main terminal 2
2 G gate
3 T1 main terminal 1
123
TO-92 (SOT54)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA201-600E TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
BTA201-600E/L01 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
BTA201-600E/L02 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
P1-P3P4-P6P7-P9P10-P12P13-P14

BTA201-600E/L01EP

Mfr. #:
Buy BTA201-600E/L01EP
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA201-600E/L01/TO-92/STANDARD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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