OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BTA201-600E/L01EP

P1-P3P4-P6P7-P9P10-P12P13-P14
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
BTA201-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 60 K/WR
th(j-lead)
thermal resistance
from junction to lead
half cycle; Fig. 6 - - 80 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
printed circuit board mounted; lead
length = 4 mm
- 150 - K/W
10
-1
10
-2
1
10
Z
th(j-lead)
(K/W)
t
p
(s)
10
-5
1 10
10
-1
10
-2
10
-4
10
-3
(1)
(2)
10
2
003aaa961
t
p
P
t
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to lead as a function of pulse width
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
BTA201-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
1 - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
1 - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
1 - 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 12 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 20 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 12 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 12 mA
V
T
on-state voltage I
T
= 1.4 A; T
j
= 25 °C; Fig. 10 - 1.2 1.5 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.2 0.3 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 12
600 - - V/µs
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 20 V/s; (snubberless
condition); gate open circuit
2.5 - - A/msdI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 1 A;
dV
com
/dt = 10 V/µs; gate open circuit
3.5 - - A/ms
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
BTA201-600E All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 22 September 2016 8 / 13
I
GT
I
GT(25°C)
T
j
(°C)
- 50 0 150
100
50
1
2
3
0
003aaa959
(1)
(2)
(3)
(1)
(2)
(3)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aak510
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aak511
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0
0
.
4
0
.
8
1
.
2
1
.
6
2
0
0
.
4
0
.
8
1
.
2
1.
6
2
(A)
I
T
(1)
(2)
(3)
003aaa960
V
o
= 1.02 V; R
s
= 0.358 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
P1-P3P4-P6P7-P9P10-P12P13-P14

BTA201-600E/L01EP

Mfr. #:
Buy BTA201-600E/L01EP
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA201-600E/L01/TO-92/STANDARD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet