PDF: 09005aef80a8e793/Source: 09005aef80a8e767 Micron Technology, Inc., reserves the right to change products or specifications without notice.
dd5c16_32x72h.fm - Rev. F 2/07 EN
4 ©2004 Micron Technology, Inc. All rights reserved.
128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions
Symbol Type Description
WE#, CAS#,
RAS#
Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
CK0, CK0#, CK1,
CK1#, CK2, CK2#
Input
Clocks: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and negative edge
of CK#. Output data (DQs and DQS) is referenced to the crossings of CK and CK#.
CKE0 Input
Clock enable: CKE HIGH activates and CKE LOW deactivates the internal clock,
input buffers and output drivers.
S0# Input
Chip select: S# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when S# is registered HIGH. S# is
considered part of the command code.
BA0, BA1 Input
Bank address: BA0 and BA1 define the device bank to which an ACTIVE, READ,
WRITE, or PRECHARGE command is being applied.
A0–A12 Input
Address inputs: Provide the row address for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one
location out of the memory array in the respective device bank. A10 sampled
during a PRECHARGE command determines whether the PRECHARGE applies to
one device bank (A10 LOW, device bank selected by BA0, BA1) or all device banks
(A10 HIGH). The address inputs also provide the op-code during a MODE
REGISTER SET command. BA0 and BA1 define which mode register (mode register
or extended mode register) is loaded during the LOAD MODE REGISTER
command.
DM0–DM8 Input
Data mask: DM is an input mask signal for write data. Input data is masked
when DM is sampled HIGH along with that input data during a WRITE access. DM
is sampled on both edges of DQS. Although DM pins are input-only, the DM
loading is designed to match that of DQ and DQS pins.
SDA Input/
Output
Serial presence-detect data: SDA is a bidirectional pin used to transfer
addresses and data into and out of the presence-detect portion of the module.
SCL Input
Serial clock for presence-detect: SCL is used to synchronize the presence-
detect data transfer to and from the module.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the
presence-detect device.
DQS0–DQS8 Input/
Output
Data strobe: Output with READ data, input with WRITE data. DQS is edge-
aligned with READ data, centered in WRITE data. Used to capture data.
CB0–CB7 Input/
Output
Check bits.
DQ0–DQ63 Input/
Output
Data input/output: Data bus.
V
REF Supply
SSTL_2 reference voltage.
V
DD Supply
Power supply: +2.5V ±0.2V. (-40B speed grade requires 2.6V ±0.1V)
V
SS Supply
Ground.
V
DDSPD Supply
Serial EEPROM positive power supply: +2.3V to +3.6V.
NC
No connect: These pins should be left unconnected.
PDF: 09005aef80a8e793/Source: 09005aef80a8e767 Micron Technology, Inc., reserves the right to change products or specifications without notice.
dd5c16_32x72h.fm - Rev. F 2/07 EN
5 ©2004 Micron Technology, Inc. All rights reserved.
128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
DM3
DM2
DQ0
DQ1
DQ2
DQ3
DM0
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ
DQ
DQ
DQ
U1
DQ12
DQ13
DQ14
DQ15
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
U2
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
U4
DM4
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
U5
DQ60
DQ61
DQ62
DQ63
DM1
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM5
DM6
DM7
CS#
CS#
CS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
S0#
BA0–BA1
RAS#
CAS#
WE#
CKE0
DDR SDRAM
CK0
CK1
DDR SDRAM U1, U2
DDR SDRAM U4, U5
DQS0
UDQS
DQS1
LDQS
DQS2
DQS3
DQS7
DQS6
DQS5
DQS4
CK1#
CK0#
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
CS#
A0
SA0
SPD EEPROM
SDA
A1
SA1
A2
SA2
WP
SCL
U3
V
REF
V
SS
DDR SDRAM
DDR SDRAM
V
DD
DDR SDRAM
V
DDSPD
SPD EEPROM
A0–A12 (128MB, 256MB)
DDR SDRAM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
NC
NC
NC
NC
NC
NC
NC
NC
U6
V
DD
DM8
CS#
DQS8
V
DD
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
LDM
UDM
UDQS
LDQS
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
CK2
CK2#
DDR SDRAM U6
V
SS
PDF: 09005aef80a8e793/Source: 09005aef80a8e767 Micron Technology, Inc., reserves the right to change products or specifications without notice.
dd5c16_32x72h.fm - Rev. F 2/07 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
General Description
General Description
The MT5VDDT1672H and MT5VDDT3272H are high-speed CMOS, dynamic random-
access, 128MB and 256MB memory modules organized in a x72 (ECC) configuration.
DDR SDRAM modules use internally configured quad-bank DDR SDRAM devices.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single 2n-bit wide,
one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit
wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is an intermittent strobe transmitted by the DDR
SDRAM during READs and by the memory controller during WRITEs. DQS is edge-
aligned with data for READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clocks (CK, CK#); the crossing of CK
going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Commands are registered at every positive edge of CK. Input data is registered on both
edges of DQS, and output data is referenced to both edges of DQS, as well as to both
edges of CK.
Serial Presence-Detect (SPD) Operation
DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is
implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains
256 bytes. The first 128 bytes can be programmed by Micron to identify the module type
and various SDRAM organizations and timing parameters. The remaining 128 bytes of
storage are available for use by the customer. System READ/WRITE operations between
the master (system logic) and the slave EEPROM device (DIMM) occur via a standard I
2
C
bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA(2:0), which
provide eight unique DIMM/EEPROM addresses. Write protect (WP) is tied to V
SS on the
module, permanently disabling hardware write protect.

MT5VDDT1672HG-335F3

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 128MB 200SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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