VS-ST780CL Series
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Vishay Semiconductors
Revision: 15-Apr-14
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Document Number: 94415
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
10000
12000
14000
16000
18000
20000
22000
110100
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
Peak Half Sine Wave On-st ate Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST7 8 0 C . . L Se r i e s
At Any Ra t ed Loa d Co nd it io n And Wit h
Rated V Applied Following Surge.
RRM
10000
12000
14000
16000
18000
20000
22000
24000
26000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Peak Ha lf Sine Wave On-state Current (A)
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST7 8 0 C . . L Se r i e s
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST7 8 0 C . . L Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST7 8 0 C . . L Se r i e s
Transient Thermal Impedance Z (K/W)