©2011 Silicon Storage Technology, Inc. S725081A 10/11
10
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Read (20 MHz)
The Read instruction outputs the data starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a low to high transition on CE#. The
internal address pointer will automatically increment until the highest memory address is reached.
Once the highest memory address is reached, the address pointer will automatically increment to the
beginning (wrap-around) of the address space, i.e. for 4 Mbit density, once the data from address loca-
tion 7FFFFH had been read, the next output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A
23
-
A
0
]. CE# must remain active low for the duration of the Read cycle. See Figure 4 for the Read
sequence.
Figure 4: Read Sequence
6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable
(WREN) instruction must be executed.
7. Block addresses for: use A
MS
-A
15
, remaining addresses can be V
IL
or V
IH
8. To continue programming to the next sequential address location, enter the 8-bit command, AFH,
followed by the data to be programmed.
9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR
instruction to make both instructions effective.
11. Manufacturer’s ID is read with A
0
=0, and Device ID is read with A
0
=1. All other address bits are 00H. The Manufac-
turer’s and Device ID output stream is continuous until terminated by a low to high transition on CE#
12. Device ID = 49H for SST25VF010A
1265 F04.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD.
03
HIGH IMPEDANCE
15 16
23
24
31
32
39
40
7047 48 55 56 63 64
N+2 N+3 N+4N N+1
D
OUT
MSB
MSB
MSB
MODE 0
MODE 3
D
OUT
D
OUT
D
OUT
D
OUT
©2011 Silicon Storage Technology, Inc. S725081A 10/11
11
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
High-Speed-Read (33 MHz)
The High-Speed-Read instruction supporting up to 33 MHz is initiated by executing an 8-bit command,
0BH, followed by address bits [A
23
-A
0
] and a dummy byte. CE# must remain active low for the duration
of the High-Speed-Read cycle. See Figure 5 for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the High-Speed-Read instruction outputs the
data starting from the specified address location. The data output stream is continuous through all
addresses until terminated by a low to high transition on CE#. The internal address pointer will auto-
matically increment until the highest memory address is reached. Once the highest memory address is
reached, the address pointer will automatically increment to the beginning (wrap-around) of the
address space, i.e. for 4 Mbit density, once the data from address location 07FFFFH has been read,
the next output will be from address location 000000H.
Figure 5: High-Speed-Read Sequence
1265 F05.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD.0B
HIGH IMPEDANCE
15 16 23 24 31 32 39 40
47 48 55 56 63 64
N+2 N+3 N+4
N
N+1
X
MSB
MSB
MSB
MODE 0
MODE 3
D
OUT
D
OUT
D
OUT
D
OUT
80
71 72
D
OUT
Note: X = Dummy Byte: 8 Clocks Input Dummy Cycle (V
IL
or V
IH
)
©2011 Silicon Storage Technology, Inc. S725081A 10/11
12
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Byte-Program
The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected
byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction
applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain
active low for the duration of the Byte-Program instruction. The Byte-Program instruction is initiated by
executing an 8-bit command, 02H, followed by address bits [A
23
-A
0
]. Following the address, the data is
input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is exe-
cuted. The user may poll the Busy bit in the software status register or wait T
BP
for the completion of
the internal self-timed Byte-Program operation. See Figure 6 for the Byte-Program sequence.
Figure 6: Byte-Program Sequence
1265 F06.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD. D
IN
02
HIGH IMPEDANCE
15 16
23
24
31
32
39
MODE 0
MODE 3
MSBMSB
MSB
LSB

SST25VF010A-33-4C-SAE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1M (128Kx8) 33MHz 2.7-3.6V Commercial
Lifecycle:
New from this manufacturer.
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