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SST25VF010A-33-4C-SAE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28
©2011 Silicon Storage Technology, Inc. S725081A 10/11
19
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Electrical Specifications
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias .............................................. -55°C to +125°C
Storage Temperature................................................. -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential .............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C)................................... 1.0W
Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds
Output Short Circuit Current
1
................................................... 50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
Table 7: Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
Extended -20°C to +85°C 2.7-3.6V
T7.1 25081
Table 8: AC Conditions of Test
1
1. See Figures 20 and 21
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T8.1 25081
Table 9: DC Operating Characteristics V
DD
= 2.7-3.6V
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 10 mA CE#=0.1 V
DD
/0.9 V
DD
@20 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 15 µA CE#=V
DD
,V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LO
Output Leakage Current 1 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
VV
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T9.0 25081
©2011 Silicon Storage Technology, Inc. S725081A 10/11
20
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Table 10:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
V
DD
Min to Read Operation 10 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 10 µs
T10.0 25081
Table 11:Capacitance (T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T11.0 25081
Table 12:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T12.0 25081
©2011 Silicon Storage Technology, Inc. S725081A 10/11
21
1 Mbit SPI Serial Flash
SST25VF010A
Data Sheet
A
Microchip Technology Company
Table 13:AC Operating Characteristics V
DD
= 2.7-3.6V
Limits
20 MHz 33 MHz
Symbol Parameter Min Max Min Max Units
F
CLK
Serial Clock Frequency 20 33 MHz
T
SCKH
Serial Clock High Time 20 13 ns
T
SCKL
Serial Clock Low Time 20 13 ns
T
SCKR
1
Serial Clock Rise Time (slew rate) 0.1 0.1 V/ns
T
SCKF
1
Serial Clock Fall Time (slew rate) 0.1 0.1 V/ns
T
CES
2
CE# Active Setup Time 20 12 ns
T
CEH
2
CE# Active Hold Time 20 12 ns
T
CHS
2
CE# Not Active Setup Time 10 10 ns
T
CHH
2
CE# Not Active Hold Time 10 10 ns
T
CPH
CE# High Time 100 100 ns
T
CHZ
CE# High to High-Z Output 20 14 ns
T
CLZ
SCK Low to Low-Z Output 0 0 ns
T
DS
Data In Setup Time 5 3 ns
T
DH
Data In Hold Time 5 3 ns
T
HLS
HOLD# Low Setup Time 10 10 ns
T
HHS
HOLD# High Setup Time 10 10 ns
T
HLH
HOLD# Low Hold Time 15 10 ns
T
HHH
HOLD# High Hold Time 10 10 ns
T
HZ
HOLD# Low to High-Z Output 20 14 ns
T
LZ
HOLD# High to Low-Z Output 20 14 ns
T
OH
Output Hold from SCK Change 0 0 ns
T
V
Output Valid from SCK 20 12 ns
T
SE
Sector-Erase 25 25 ms
T
BE
Block-Erase 25 25 ms
T
SCE
Chip-Erase 100 100 ms
T
BP
Byte-Program 20 20 µs
T13.0 25081
1. Maximum Serial Clock Rise and Fall times may be limited by T
SCKH
and T
SCKL
requirements.
2. Relative to SCK.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28

SST25VF010A-33-4C-SAE-T

Mfr. #:
Buy SST25VF010A-33-4C-SAE-T
Manufacturer:
Microchip Technology
Description:
NOR Flash 1M (128Kx8) 33MHz 2.7-3.6V Commercial
Lifecycle:
New from this manufacturer.
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