2014 Microchip Technology Inc. DS20005137B-page 1
Features
Single Voltage Read and Write Operations
- 2.3-3.6V
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
High Speed Clock Frequency
- 80 MHz (2.7-3.6V)
- 50 MHz (2.3-2.7V)
Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
Low Power Consumption:
- Active Read Current: 10 mA (typical)
- Standby Current: 5 μA (typical)
Flexible Erase Capability
- Uniform 4 KByte sectors
- Uniform 32 KByte overlay blocks
- Uniform 64 KByte overlay blocks
Fast Erase and Byte-Program:
- Chip-Erase Time: 35 ms (typical)
- Sector-/Block-Erase Time: 18 ms (typical)
- Byte-Program Time: 7 μs (typical)
Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
End-of-Write Detection
- Software polling the BUSY bit in Status Register
- Busy Status readout on SO pin in AAI Mode
Hold Pin (HOLD#)
- Suspends a serial sequence to the memory
without deselecting the device
Write Protection (WP#)
- Enables/Disables the Lock-Down function of the
status register
Software Write Protection
- Write protection through Block-Protection bits in
status register
Temperature Range
- Commercial: 0°C to +70°C
Packages Available
- 8-lead SOIC (150 mils)
- 8-lead SOIC (200 mils)
- 8-contact WSON (6mm x 5mm)
All devices are RoHS compliant
Product Description
The 25 series Serial Flash family features a four-wire,
SPI-compatible interface that allows for a low pin-count
package which occupies less board space and ulti-
mately lowers total system costs. The SST25PF080B
devices are enhanced with improved operating fre-
quency and lower power consumption. SST25PF080B
SPI serial flash memories are manufactured with pro-
prietary, high-performance CMOS SuperFlash technol-
ogy. The split-gate cell design and thick-oxide tunneling
injector attain better reliability and manufacturability
compared with alternate approaches.
The SST25PF080B devices significantly improve per-
formance and reliability, while lowering power con-
sumption. The devices write (Program or Erase) with a
single power supply of 2.3-3.6V for SST25PF080B.
The total energy consumed is a function of the applied
voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time,
the total energy consumed during any Erase or Pro-
gram operation is less than alternative flash memory
technologies.
The SST25PF080B device is offered in 8-lead SOIC
(150 mils), 8-lead SOIC (200 mils), and 8-contact
WSON (6mm x 5mm). See Figure 2-1 for pin assign-
ments.
SST25PF080B
8 Mbit 2.3-3.6V SPI Serial Flash
Obsolete Device
Please use SST25VF080B
SST25PF080B
DS20005137B-page 2 2014 Microchip Technology Inc.
1.0 BLOCK DIAGRAM
FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM
25137 B1.0
I/O Buffers
and
Data Latches
SuperFlash
Memory
X - Decoder
Control Logic
Address
Buffers
and
Latches
CE#
Y - Decoder
SCK SI SO WP# HOLD#
Serial Interface
2014 Microchip Technology Inc. DS20005137B-page 3
SST25PF080B
2.0 PIN DESCRIPTION
FIGURE 2-1: PIN ASSIGNMENTS
TABLE 2-1: PIN DESCRIPTION
Symbol Pin Name Functions
SCK Serial Clock To provide the timing of the serial interface.
Commands, addresses, or input data are latched on the rising edge of the clock
input, while output data is shifted out on the falling edge of the clock input.
SI Serial Data Input To transfer commands, addresses, or data serially into the device.
Inputs are latched on the rising edge of the serial clock.
SO Serial Data Output To transfer data serially out of the device.
Data is shifted out on the falling edge of the serial clock.
Outputs Flash busy status during AAI Programming when reconfigured as RY/BY#
pin. See “Hardware End-of-Write Detection” on page 9 for details.
CE# Chip Enable The device is enabled by a high to low transition on CE#. CE# must remain low for
the duration of any command sequence.
WP# Write Protect The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register.
HOLD# Hold To temporarily stop serial communication with SPI flash memory without resetting
the device.
V
DD
Power Supply To provide power supply voltage: 2.3-3.6V for SST25PF080B
V
SS
Ground
1
2
3
4
8
7
6
5
CE#
SO
WP#
V
SS
V
DD
HOLD#
SCK
SI
Top View
25137 08-soic S2A P1.0
1
2
3
4
8
7
6
5
CE#
SO
WP#
V
SS
Top View
V
DD
HOLD#
SCK
SI
25137 08-wson A P2.0
8-lead SOIC
8-contact WSON

SST25PF080B-80-4C-QAE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.3V to 3.6V 8Mbit SPI Serial Flash
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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