2014 Microchip Technology Inc. DS20005137B-page 7
SST25PF080B
4.5 Instructions
Instructions are used to read, write (Erase and Pro-
gram), and configure the SST25PF080B. The instruc-
tion bus cycles are 8 bits each for commands (Op
Code), data, and addresses. Prior to executing any
Byte-Program, Auto Address Increment (AAI) program-
ming, Sector-Erase, Block-Erase, Write-Status-Regis-
ter, or Chip-Erase instructions, the Write-Enable
(WREN) instruction must be executed first. The com-
plete list of instructions is provided in Table 4-4. All
instructions are synchronized off a high to low transition
of CE#. Inputs will be accepted on the rising edge of
SCK starting with the most significant bit. CE# must be
driven low before an instruction is entered and must be
driven high after the last bit of the instruction has been
shifted in (except for Read, Read-ID, and Read-Status-
Register instructions). Any low to high transition on
CE#, before receiving the last bit of an instruction bus
cycle, will terminate the instruction in progress and
return the device to standby mode. Instruction com-
mands (Op Code), addresses, and data are all input
from the most significant bit (MSB) first.
TABLE 4-4: DEVICE OPERATION INSTRUCTIONS
Instruction Description Op Code Cycle
1
1. One bus cycle is eight clock periods.
Address
Cycle(s)
2
2. Address bits above the most significant bit of each density can be V
IL
or V
IH
.
Dummy
Cycle(s)
Data
Cycle(s)
Read Read Memory 0000 0011b (03H) 301to
High-Speed Read Read Memory at higher speed 0000 1011b (0BH) 311to
4 KByte Sector-Erase
3
3. 4KByte Sector Erase addresses: use A
MS
-A
12,
remaining addresses are don’t care but must be set either at V
IL
or V
IH.
Erase 4 KByte of
memory array
0010 0000b (20H) 300
32 KByte Block-Erase
4
4. 32KByte Block Erase addresses: use A
MS
-A
15,
remaining addresses are don’t care but must be set either at V
IL
or V
IH.
Erase 32 KByte block
of memory array
0101 0010b (52H) 300
64 KByte Block-Erase
5
5. 64KByte Block Erase addresses: use A
MS
-A
16,
remaining addresses are don’t care but must be set either at V
IL
or V
IH.
Erase 64 KByte block
of memory array
1101 1000b (D8H) 300
Chip-Erase Erase Full Memory Array 0110 0000b (60H) or
1100 0111b (C7H)
000
Byte-Program To Program One Data Byte 0000 0010b (02H) 301
AAI-Word-Program
6
6. To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of data
to be programmed. Data Byte 0 will be programmed into the initial address [A
23
-A
1
] with A
0
=0, Data Byte 1 will be pro-
grammed into the initial address [A
23
-A
1
] with A
0
=1.
Auto Address Increment
Programming
1010 1101b (ADH) 302to
RDSR
7
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
Read-Status-Register 0000 0101b (05H) 001to
EWSR Enable-Write-Status-Register 0101b 0000b (50H) 000
WRSR Write-Status-Register 0000 0001b (01H) 001
WREN Write-Enable 0000 0110b (06H) 000
WRDI Write-Disable 0000 0100b (04H) 000
RDID
8
Read-ID 1001 0000b (90H) or
1010 1011b (ABH)
301to
JEDEC-ID JEDEC ID Read 1001 1111b (9FH) 003to
EBSY Enable SO to output RY/BY#
status during AAI programming
0111 0000b (70H) 000
DBSY Disable SO to output RY/BY#
status during AAI programming
1000 0000b (80H) 000
Read SID Read Security ID 1000 1000b (88H) 1 1 1 to 32
Program SID
9
Program User Security ID area 1010 0101b (A5H) 1 0 1
Lockout SID
9
Lockout Security ID Programming 1000 0101b (85H) 0 0 0
SST25PF080B
DS20005137B-page 8 2014 Microchip Technology Inc.
4.5.1 READ (33/25 MHZ)
The Read instruction, 03H, supports up to 33 MHz (2.7-
3.6V operation) or 25 MHz (2.3-2.7V operation) Read.
The device outputs the data starting from the specified
address location. The data output stream is continuous
through all addresses until terminated by a low to high
transition on CE#. The internal address pointer will
automatically increment until the highest memory
address is reached. Once the highest memory address
is reached, the address pointer will automatically incre-
ment to the beginning (wrap-around) of the address
space. Once the data from address location 1FFFFFH
has been read, the next output will be from address
location 000000H.
The Read instruction is initiated by executing an 8-bit
command, 03H, followed by address bits [A23-A0].
CE# must remain active low for the duration of the
Read cycle. See Figure 4-3 for the Read sequence.
FIGURE 4-3: READ SEQUENCE
4.5.2 HIGH-SPEED-READ (80/50 MHZ)
The High-Speed-Read instruction supporting up to 80
MHz (2.7-3.6V operation) or 50 MHz (2.3-2.7V opera-
tion) Read is initiated by executing an 8-bit command,
0BH, followed by address bits [A23-A0] and a dummy
byte. CE# must remain active low for the duration of the
High-Speed-Read cycle. See Figure 4-4 for the High-
Speed-Read sequence.
Following a dummy cycle, the High-Speed-Read
instruction outputs the data starting from the specified
address location. The data output stream is continuous
through all addresses until terminated by a low to high
transition on CE#. The internal address pointer will
automatically increment until the highest memory
address is reached. Once the highest memory address
is reached, the address pointer will automatically incre-
ment to the beginning (wrap-around) of the address
space. Once the data from address location FFFFFH
has been read, the next output will be from address
location 00000H.
FIGURE 4-4: HIGH-SPEED-READ SEQUENCE
8. Manufacturer’s ID is read with A
0
=0, and Device ID is read with A
0
=1. All other address bits are 00H. The Manufacturer’s ID
and Device ID output stream is continuous until terminated by a low-to-high transition on CE#.
9. Requires a prior WREN command.
25137 ReadSeq 0.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD.
03
HIGH IMPEDANCE
15 16
23
24
31
32
39
40
7047 48 55 56 63 64
N+2 N+3 N+4N N+1
D
OUT
MSB
MSB
MSB
MODE 0
MODE 3
D
OUT
D
OUT
D
OUT
D
OUT
25137 HSRdSeq.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD.0B
HIGH IMPEDANCE
15 16 23 24 31 32 39 40
47 48 55 56 63 64
N+2 N+3 N+4
N
N+1
X
MSB
MSB
MSB
MODE 0
MODE 3
D
OUT
D
OUT
D
OUT
D
OUT
80
71 72
D
OUT
Note: X = Dummy Byte: 8 Clocks Input Dummy Cycle (V
IL
or V
IH
)
2014 Microchip Technology Inc. DS20005137B-page 9
SST25PF080B
4.5.3 BYTE-PROGRAM
The Byte-Program instruction programs the bits in the
selected byte to the desired data. The selected byte
must be in the erased state (FFH) when initiating a Pro-
gram operation. A Byte-Program instruction applied to a
protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE# must remain active
low for the duration of the Byte-Program instruction.
The Byte-Program instruction is initiated by executing
an 8-bit command, 02H, followed by address bits [A
23
-
A
0
]. Following the address, the data is input in order
from MSB (bit 7) to LSB (bit 0). CE# must be driven
high before the instruction is executed. The user may
poll the Busy bit in the software status register or wait
T
BP
for the completion of the internal self-timed Byte-
Program operation. See Figure 4-5 for the Byte-Pro-
gram sequence.
FIGURE 4-5: BYTE-PROGRAM SEQUENCE
4.5.4 AUTO ADDRESS INCREMENT (AAI)
WORD-PROGRAM
The AAI program instruction allows multiple bytes of
data to be programmed without re-issuing the next
sequential address location. This feature decreases
total programming time when multiple bytes or entire
memory array is to be programmed. An AAI Word pro-
gram instruction pointing to a protected memory area
will be ignored. The selected address range must be in
the erased state (FFH) when initiating an AAI Word
Program operation. While within AAI Word Program-
ming sequence, only the following instructions are
valid: for software end-of-write detection—AAI Word
(ADH), WRDI (04H), and RDSR (05H); for hardware
end-of-write detection—AAI Word (ADH) and WRDI
(04H). There are three options to determine the com-
pletion of each AAI Word program cycle: hardware
detection by reading the Serial Output, software detec-
tion by polling the BUSY bit in the software status reg-
ister, or wait T
BP.
Refer to“End-of-Write Detection” for
details.
Prior to any write operation, the Write-Enable (WREN)
instruction must be executed. Initiate the AAI Word
Program instruction by executing an 8-bit command,
ADH, followed by address bits [A
23
-A
0
]. Following the
addresses, two bytes of data are input sequentially,
each one from MSB (Bit 7) to LSB (Bit 0). The first byte
of data (D0) is programmed into the initial address [A
23
-
A
1
] with A
0
=0, the second byte of Data (D1) is pro-
grammed into the initial address [A
23
-A
1
] with A
0
=1.
CE# must be driven high before executing the AAI
Word Program instruction. Check the BUSY status
before entering the next valid command. Once the
device indicates it is no longer busy, data for the next
two sequential addresses may be programmed, fol-
lowed by the next two, and so on.
When programming the last desired word, or the high-
est unprotected memory address, check the busy sta-
tus using either the hardware or software (RDSR
instruction) method to check for program completion.
Once programming is complete, use the applicable
method to terminate AAI. If the device is in Software
End-of-Write Detection mode, execute the Write-Dis-
able (WRDI) instruction, 04H. If the device is in AAI
Hardware End-of-Write Detection mode, execute the
Write-Disable (WRDI) instruction, 04H, followed by the
8-bit DBSY command, 80H. There is no wrap mode
during AAI programming once the highest unprotected
memory address is reached. See Figures 4-8 and 4-9
for the AAI Word programming sequence.
4.5.5 END-OF-WRITE DETECTION
There are three methods to determine completion of a
program cycle during AAI Word programming: hard-
ware detection by reading the Serial Output, software
detection by polling the BUSY bit in the Software Status
Register, or wait T
BP.
The Hardware End-of-Write
detection method is described in the section below.
4.5.6 HARDWARE END-OF-WRITE
DETECTION
The Hardware End-of-Write detection method elimi-
nates the overhead of polling the Busy bit in the Soft-
ware Status Register during an AAI Word program
operation. The 8-bit command, 70H, configures the
Serial Output (SO) pin to indicate Flash Busy status
during AAI Word programming. (see Figure 4-6) The 8-
25137 ByteProg.0
CE#
SO
SI
SCK
ADD.
012345678
ADD. ADD. D
IN
02
HIGH IMPEDANCE
15 16
23
24
31
32
39
MODE 0
MODE 3
MSBMSB
MSB
LSB

SST25PF080B-80-4C-QAE

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.3V to 3.6V 8Mbit SPI Serial Flash
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New from this manufacturer.
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