Pin Descriptions
The pin description table below is a comprehensive list of all possible pins for all DDR3
modules. All pins listed may not be supported on this module. See Pin Assignments for
information specific to this module.
Table 6: Pin Descriptions
Symbol Type Description
Ax Input
Address inputs: Provide the row address for ACTIVE commands, and the column ad-
dress and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments Table for density-specific
addressing information.
BAx Input
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.
CKx,
CKx#
Input
Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.
CKEx Input
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circui-
try and clocks on the DRAM.
DMx Input
Data mask (x8 devices only): DM is an input mask signal for write data. Input data
is masked when DM is sampled HIGH, along with that input data, during a write ac-
cess. Although DM pins are input-only, DM loading is designed to match that of the
DQ and DQS pins.
ODTx Input
On-die termination: Enables (registered HIGH) and disables (registered LOW) termi-
nation resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input
will be ignored if disabled via the LOAD MODE command.
Par_In Input
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
RESET# Input
(LVCMOS)
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM
and the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitial-
ized as though a normal power-up was executed.
Sx# Input
Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.
SAx Input
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM ad-
dress range on the I
2
C bus.
SCL Input
Serial clock for temperature sensor/SPD EEPROM: Used to synchronize communi-
cation to and from the temperature sensor/SPD EEPROM on the I
2
C bus.
CBx I/O
Check bits: Used for system error detection and correction.
DQx I/O
Data input/output: Bidirectional data bus.
DQSx,
DQSx#
I/O
Data strobe: Differential data strobes. Output with read data; edge-aligned with
read data; input with write data; center-aligned with write data.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
Pin Descriptions
PDF: 09005aef83af6f6b
kdzs36c512_1gx72pz.pdf - Rev. D 6/11 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 6: Pin Descriptions (Continued)
Symbol Type Description
SDA I/O
Serial data: Used to transfer addresses and data into and out of the temperature sensor/
SPD EEPROM on the I
2
C bus.
TDQSx,
TDQSx#
Output
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are
no function.
Err_Out# Output
(open drain)
Parity error output: Parity error found on the command and address bus.
EVENT# Output
(open drain)
Temperature event:The EVENT# pin is asserted by the temperature sensor when crit-
ical temperature thresholds have been exceeded.
V
DD
Supply
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component V
DD
and V
DDQ
are connected to the module V
DD
.
V
DDSPD
Supply
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.
V
REFCA
Supply
Reference voltage: Control, command, and address V
DD
/2.
V
REFDQ
Supply
Reference voltage: DQ, DM V
DD
/2.
V
SS
Supply Ground.
V
TT
Supply
Termination voltage: Used for control, command, and address V
DD
/2.
NC
No connect: These pins are not connected on the module.
NF
No function: These pins are connected within the module, but provide no functionality.
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
Pin Descriptions
PDF: 09005aef83af6f6b
kdzs36c512_1gx72pz.pdf - Rev. D 6/11 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DQ Map
Table 7: Component-to-Module DQ Map
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
Component
Reference
Number
Component
DQ Module DQ
Module Pin
Number
U1 0 2 9 U11 0 61 228
1 1 4 1 62 233
2 3 10 2 60 227
3 0 3 3 63 234
U2 0 10 18 U12 0 53 219
1 9 13 1 54 224
2 11 19 2 52 218
3 8 12 3 55 225
U3 0 18 27 U13 0 45 210
1 17 22 1 46 215
2 19 28 2 44 209
3 16 21 3 47 216
U4 0 26 36 U14 0 37 201
1 25 31 1 38 206
2 27 37 2 36 200
3 24 30 3 39 207
U5 0 CB2 45 U16 0 CB5 159
1 CB1 40 1 CB6 164
2 CB3 46 2 CB4 158
3 CB0 39 3 CB7 165
U7 0 34 87 U17 0 29 150
1 33 82 1 30 155
2 35 88 2 28 149
3 32 81 3 31 156
U8 0 42 96 U18 0 21 141
1 41 91 1 22 146
2 43 97 2 20 140
3 40 90 3 23 147
U9 0 50 105 U19 0 13 132
1 49 100 1 14 137
2 51 106 2 12 131
3 48 99 3 15 138
U10 0 58 114 U20 0 5 123
1 57 109
1 5 128
2 59 115
2 6 122
3 56 108
3 7 129
4GB, 8GB (x72, ECC, DR) 240-Pin 1.35V DDR3 RDIMM
DQ Map
PDF: 09005aef83af6f6b
kdzs36c512_1gx72pz.pdf - Rev. D 6/11 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

MT36KDZS1G72PZ-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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