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SS8P4CHM3_A/I

P1-P3P4-P5
SS8P3C, SS8P4C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-15
1
Document Number: 89029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Dual Common Cathode Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 4.0 A
V
RRM
30 V, 40 V
I
FSM
120 A
E
AS
20 mJ
V
F
at I
F
= 4 A 0.42 V
T
J
max. 150 °C
Package TO-277A
Diode variations Single
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS8P3C SS8P4C UNIT
Device marking code S83C S84C
Maximum repetitive peak reverse voltage V
RRM
30 40 V
Maximum average forward rectified current (fig. 1)
total device
I
F(AV)
8.0 A
per diode 4.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
120 A
Non-repetitive avalanche energy at 25 °C, I
AS
= 2 A per diode E
AS
20
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
SS8P3C, SS8P4C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-15
2
Document Number: 89029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
I
F
= 2.0 A
T
A
= 25 °C
V
F
(1)
0.42 -
V
I
F
= 4.0 A 0.48 0.58
I
F
= 2.0 A
T
A
= 125 °C
0.32 -
I
F
= 4.0 A 0.42 0.48
Reverse current per diode Rated V
R
T
A
= 25 °C
I
R
(2)
130 300 μA
T
A
= 125 °C 26 35 mA
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
230 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL SS8P3C SS8P4C UNIT
Typical thermal resistance per diode
R
JA
(1)
60
°C/W
R
JL
3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS8P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS8P4C-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
SS8P4CHM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
SS8P4CHM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
SS8P4CHM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
SS8P4CHM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
SS8P3C, SS8P4C
www.vishay.com
Vishay General Semiconductor
Revision: 13-Jan-15
3
Document Number: 89029
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
2
4
6
8
10
0 25 50 75 100 125 150 175
Average Forward Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L
measured
at the Cathode Band Terminal
0
0.8
0.4
1.2
1.6
2.0
2.4
01 23 45
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
0.01
0.1
1
10
100
0.20.1 0.30 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 6050 70 9080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10
1000
100
0.1 1 10 100
Reverse Voltage (V)
Junc
tion Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
P1-P3P4-P5

SS8P4CHM3_A/I

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Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 8A,40V,SM SKY RECT.
Lifecycle:
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