OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PMD3001D,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PMD3001D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 6 of 16
NXP Semiconductors
PMD3001D
MOSFET driver
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per NPN transistor
I
CBO
collector-basecut-off
current
V
CB
=40V; I
E
= 0 A - - 100 nA
V
CB
=40V; I
E
=0A;
T
j
= 150 °C
--50µA
h
FE
DC current gain V
CE
=5V; I
C
= 1 mA 300 450 -
V
CE
=5V; I
C
= 200 mA 300 450 830
V
CE
=5V; I
C
= 500 mA
[1]
300 400 -
V
CE
=5V; I
C
=1A
[1]
200 340 -
V
CE
=5V; I
C
=2A
[1]
75 120 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 5 mA - 30 80 mV
I
C
= 500 mA; I
B
=50mA
[1]
- 100 120 mV
I
C
= 1 A; I
B
= 100 mA
[1]
- 180 230 mV
I
C
= 2 A; I
B
= 200 mA
[1]
- 360 440 mV
V
BEsat
base-emitter
saturation voltage
I
C
= 100 mA; I
B
= 5 mA - 0.75 0.9 V
I
C
= 500 mA; I
B
=50mA
[1]
- 0.9 1.1 V
I
C
= 1 A; I
B
= 100 mA
[1]
- 1 1.2 V
I
C
= 2 A; I
B
= 200 mA
[1]
- 1.1 1.3 V
V
BE
base-emitter voltage V
CE
=5V; I
C
= 1 A 700 800 1100 mV
Per PNP transistor
I
CBO
collector-basecut-off
current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 300 450 -
V
CE
= −5 V; I
C
= −200 mA 250 390 640
V
CE
= −5 V; I
C
= −500 mA
[1]
215 290 -
V
CE
= −5 V; I
C
= −1A
[1]
150 200 -
V
CE
= −5 V; I
C
= −2A
[1]
50 85 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −5mA - −40 −140 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −110 −170 mV
I
C
= −1 A; I
B
= −100 mA
[1]
- −200 −310 mV
I
C
= −2 A; I
B
= −200 mA
[1]
- −400 −500 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −100 mA; I
B
= −5mA - −0.75 −0.9 V
I
C
= −500 mA; I
B
= −50 mA
[1]
- −0.88 −1.1 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −0.95 −1.2 V
I
C
= −2 A; I
B
= −200 mA
[1]
- −1.1 −1.3 V
V
BE
base-emitter voltage V
CE
= −5 V; I
C
= −1A −700 −800 −1100 mV
PMD3001D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 7 of 16
NXP Semiconductors
PMD3001D
MOSFET driver
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02
Per device
t
d
delay time I
C
= 0.5 A; V
I
=8V - 3 - ns
t
r
rise time - 17 - ns
t
on
turn-on time - 20 - ns
t
s
storage time - 3 - ns
t
f
fall time - 6 - ns
t
off
turn-off time - 9 - ns
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
PMD3001D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 28 August 2009 8 of 16
NXP Semiconductors
PMD3001D
MOSFET driver
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 5. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 6. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
V
CE
=5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
006aaa788
400
200
600
800
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
V
CE
(V)
054231
006aaa793
0.8
1.6
2.4
I
C
(A)
0
IB (mA) = 17
15.3
13.6
11.9
10.2
6.8
5.1
3.4
1.7
8.5
006aaa789
0.6
0.4
0.8
1.0
V
BE
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(3)
(2)
006aaa792
0.6
0.8
0.4
1.0
1.2
V
BEsat
(V)
0.2
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PMD3001D,115

Mfr. #:
Buy PMD3001D,115
Manufacturer:
Nexperia
Description:
Gate Drivers MOSFET DRIVER TAPE 7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet