Data Sheet HMC7543
Rev. A | Page 3 of 16
SPECIFICATIONS
T
A
= 25°C, V
DDx
= 4 V, I
DD
= 450 mA, unless otherwise noted.
Table 1.
Parameter Min Typ Max Unit
OPERATING CONDITIONS
RF Frequency Range 71 76 GHz
PERFORMANCE
Gain 19 21.5 dB
Gain Variation over Temperature 0.02 dB/°C
Output Power for 1 dB Compression (P1dB) 22.5 25 dBm
Saturated Output Power (P
) 26.5 dBm
Output Third-Order Intercept (OIP3) at Maximum Gain
1
30 dBm
12
dB
Output Return Loss 12 dB
POWER SUPPLY
Total Supply Current (I
)
2
450 mA
1
Data taken at output power (P
OUT
) = 12 dBm per tone, 1 MHz spacing.
2
Adjust V
GGx
from −2 V to 0 V to achieve the total drain current (I
DD
) = 450 mA.
HMC7543 Data Sheet
Rev. A | Page 4 of 16
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Drain Bias Voltage (V
DD1
to V
DD4
) 4.5 V
Gate Bias Voltage (V
GG1
to V
GG4
) −3 V to 0 V
Maximum Junction Temperature (to
Maintain 1 Million Hours Mean Time to
Failure (MTTF))
175°C
Operating Temperature Range 55°C to +85°C
Storage Temperature Range −65°C to +150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Table 3. Thermal Resistance
Package Type θ
JC
1
Unit
25-Pad Bare Die [CHIP] 48.33 °C/W
1
Based on ABLETHERM® 2600BT as die attach epoxy with thermal
conductivity of 20 W/mK.
ESD CAUTION
Data Sheet HMC7543
Rev. A | Page 5 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pad Configuration
Table 4. Pad Function Descriptions
Pad No. Mnemonic Description
1, 3, 4, 6, 8, 10, 12,
14, 17, 19, 21, 23, 25
GND Ground Connection (See Figure 3).
2 RFIN RF Input. DC couple RFIN and match it to 50 Ω (See Figure 4).
5, 7, 9, 11 V
DD1
to V
DD4
Drain Bias Voltage for the Power Amplifier (See Figure 5).
13 RFOUT RF Output. AC couple RFOUT and match it to 50 Ω (see Figure 6).
15 V
DET
Detector Voltage for the Power Detector (See Figure 7). V
DET
is the dc voltage representing the RF
output power rectified by the diode, which is biased through an external resistor. Refer to the typical
application circuit for the required external components (see Figure 40).
16 V
REF
Reference Voltage for the Power Detector (See Figure 7). V
REF
is the dc bias of the diode biased through
an external resistor used for temperature compensation of V
DET
. Refer to the typical application circuit
for the required external components (see Figure 40).
18, 20, 22, 24 V
GG4
to V
GG1
Gate Bias Voltage for the Power Amplifier (See Figure 8). For the required external components, see
Figure 40.
Die Bottom GND Ground. The die bottom must be connected to the RF/dc ground (see Figure 3).
4
8
5
24
22
20 18 16
15
9 117 10
6
3
1
25 23
21
19
2
13
17
12
14
V
DD1
GND GND GND GND
V
DD2
RFIN
V
GG1
V
GG2
V
GG3
RFOUT
V
DD3
V
DD4
V
GG4
V
REF
V
DET
GND
GND
GND GND GNDGND
GND
GND
GND
HMC7543
TOP VIEW
(Not to Scale)
13423-002

HMC7543

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier 71-76GHz 0.4W PA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet