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BCW68HVL

P1-P3P4-P6P7-P9P10-P12P13-P13
BCW68 series
45 V, 800 mA PNP general-purpose transistor
Rev. 1 — 21 April 2017 Product data sheet
1 General description
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complements: BCW66F/G/H
2 Features and benefits
• High current
• AEC-Q101 qualified
3 Applications
• General-purpose switching and amplification
4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - -45 V
I
C
collector current - - -800 mA
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - -1 A
DC current gain
BCW68F 100 - 250
BCW68G 160 - 400
h
FE
BCW68H
V
CE
= -1 V; I
C
= -100 mA; T
amb
= 25 °C
[1]
250 - 600
[1] pulsed: t
p
≤ 300 μs, δ ≤ 0.02
Nexperia
BCW68 series
45 V, 800 mA PNP general-purpose transistor
BCW68X_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
2 / 13
5 Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
1 2
3
sym132
E
C
B
6 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BCW68F
BCW68G
BCW68H
TO-236AB plastic surface-mounted package; 3 leads SOT23
7 Marking
Table 4. Marking
Type number Marking code
BCW68F
[1]
ET%
BCW68G
[1]
EU%
BCW68H
[1]
EV%
[1] % = placeholder for manufacturing site code
8 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -50 V
V
CEO
collector-emitter voltage open base - -45 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -800 mA
I
CM
peak collector current single pulse; t
p
≤ 1 ms - -1 A
I
B
base current - -100 mA
Nexperia
BCW68 series
45 V, 800 mA PNP general-purpose transistor
BCW68X_SER All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved.
Product data sheet Rev. 1 — 21 April 2017
3 / 13
Symbol Parameter Conditions Min Max Unit
I
BM
peak base current single pulse; t
p
≤ 1 ms - -200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB), single-sided chopper, tin-plated and standard footprint.
T
amb
(°C)
-75 17512525 75-25
aaa-026537
200
100
300
400
P
tot
(mW)
0
FR4 PCB, standard footprint
Figure 1. Power derating curve
9 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
- - 500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
P1-P3P4-P6P7-P9P10-P12P13-P13

BCW68HVL

Mfr. #:
Buy BCW68HVL
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 45 V, 800 mA PNP general-purpose transistor
Lifecycle:
New from this manufacturer.
Delivery:
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