OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-VSKT26/16

P1-P3P4-P6P7-P9
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-14
1
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
PRODUCT SUMMARY
I
T(AV)
or I
F(AV)
27 A
Type Modules - Thyristor, Standard
ADD-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
or I
F(AV)
85 °C 27
A
I
O(RMS)
As AC switch 60
I
TSM,
I
FSM
50 Hz 400
60 Hz 420
I
2
t
50 Hz 800
kA
2
s
60 Hz 730
I
2
t 8000 kA
2
s
V
RRM
Range 400 to 1600 V
T
Stg
-40 to 125 °C
T
J
-40 to 125 °C
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-14
2
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
Notes
(1)
I
2
t for time t
x
= I
2
t x t
x
(2)
Average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
(3)
16.7 % x x I
AV
< I < x I
AV
(4)
I > x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
RRM,
I
DRM
AT 125 °C
mA
VS-VSK.26
04 400 500 400
15
06 600 700 600
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current (thyristors) I
T(AV)
180° conduction, half sine wave,
T
C
= 85 °C
27
A
Maximum average forward current (diodes) I
F(AV)
Maximum continuous RMS on-state current,
as AC switch
I
O(RMS)
60
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
400
t = 8.3 ms 420
t = 10 ms
100 % V
RRM
reapplied
335
t = 8.3 ms 350
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
Initial T
J
= T
J
maximum
800
A
2
s
t = 8.3 ms 730
t = 10 ms
100 % V
RRM
reapplied
560
t = 8.3 ms 510
Maximum I
2
t for fusing I
2
t
(1)
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
8000 A
2
s
Maximum value or threshold voltage V
T(TO)
(2)
Low level
(3)
T
J
= T
J
maximum
0.86
V
High level
(4)
1.09
Maximum value of on-state
slope resistance
r
t
(2)
Low level
(3)
T
J
= T
J
maximum
9.58
m
High level
(4)
7.31
Maximum peak on-state or forward voltage
V
TM
I
TM
= x I
T(AV)
T
J
= 25 °C 1.65 V
V
FM
I
FM
= x I
F(AV)
Maximum non-repetitive rate of rise of
turned on current
dI/dt
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
= x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
150 A/μs
Maximum holding current I
H
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current I
L
T
J
= 25 °C, anode supply = 6 V, resistive load 400
or
I
(RMS)
I
(RMS)
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-14
3
Document Number: 94629
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= -40 °C
Anode supply = 6 V
resistive load
270
mAT
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied 0.25 V
Maximum gate current that will not trigger I
GD
T
J
= 125 °C, rated V
DRM
applied 6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit 15 mA
Maximum RMS insulation voltage V
INS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage dV/dt T
J
= 125 °C, linear to 0.67 V
DRM
1000 V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
-40 to 125 °C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
DC operation 0.76
°C/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
4
Nm
busbar 3
Approximate weight
75 g
2.7 oz.
Case style JEDEC
®
AAP GEN VII (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.26.. 0.212 0.258 0.330 0.466 0.72 0.166 0.276 0.357 0.482 0.726 °C/W
P1-P3P4-P6P7-P9

VS-VSKT26/16

Mfr. #:
Buy VS-VSKT26/16
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 1600 Volt 27 Amp 420 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet