BZD27-M Series
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Vishay Semiconductors
Rev. 1.6.,18-Mar-15
4
Document Number: 85155
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage
Fig. 3 - Power Dissipation vs. Ambient Temperature
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
I
F
- Forward Current (A)
V
F
- Forward Voltage (V)
Max. V
F
Ty p. V
F
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
C
D
- Typ. Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
C5V1P
C6V8P
C12P
C27P
C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150 175
22774
P
tot
- Total Power Dissipation (W)
T
amb
- Ambient Temperature (°C)
R
thJL
= 30K/W
R
thJA
= 180K/W
17415
t
I
RSM
(%)
100
90
50
10
t
1
t
1
= 10 µs
t
2
= 1000 µs
t
2
