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LT1001CN8#PBF

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4
LT1001
1001fb
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
TIME AFTER POWER ON (MINUTES)
0
CHANGE IN OFFSET VOLTAGE (µV)
4
3
2
1
4
1001 G03
1
2
3
5
V
S
= ±15V
T
A
= 25°C
METAL CAN (H) PACKAGE
DUAL-IN-LINE PACKAGE
PLASTIC (N) OR CERDIP (J)
Long Term Stability of Four
Representative Units
0.1Hz to 10Hz Noise
TIME (SECONDS)
0
NOISE VOLTAGE 100nV/DIV
8
1001 G04
2
4
6
10
TEMPERATURE (°C)
–50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25 75
1001 G07
–25 0
50 100 125
INPUT BIAS AND OFFSET CURRENTS (nA)
V
S
= ±15V
BIAS CURRENT
OFFSET CURRENT
Input Bias and Offset Current
vs Temperature
±DIFFERENTIAL INPUT (V)
0.1
0
INVERTING OR NON-INVERTING
INPUT BIAS CURRENT (mA)
10
20
30
1.0 3.00.3 10 30
1001 G09
V
S
= ±15V
T
A
= 25°C
I
B
≈ 1 nA to V
DIFF
= 0.7V
TIME (MONTHS)
0
OFFSET VOLTAGE CHANGE (µV)
4
1001 G06
1
2
3
5
10
5
0
–5
–10
COMMON MODE INPUT VOLTAGE
–15
INPUT BIAS CURRENT (nA)
1.5
1.0
0.5
0
–.5
–1.0
–1.5
–10
–5 0 5
1001 G08
10 15
V
S
= ±15V
T
A
= 25°C
DEVICE WITH POSITIVE INPUT CURRENT
DEVICE WITH NEGATIVE INPUT CURRENT
–
+
V
CM
I
b
COMMON MODE
INPUT RESISTANCE = = 280GΩ
28V
0.1nA
FREQUENCY (Hz)
1
1
3
10
30
100
0.1
1.0
3
10
10 100 1000
1001 G05
VOLTAGE NOISE nV/√Hz
T
A
= 25°C
V
S
= ±3 TO ±18V
VOLTAGE
CURRENT
1/f CORNER
70Hz
1/f CORNER
4Hz
0.3
CURRENT NOISE pA/√Hz
Noise Spectrum
OFFSET VOLTAGE DRIFT (µV/°C)
–1.0
NUMBER OF UNITS
100
80
60
40
20
+0.2
1001 G01
–0.6
–0.2
0
+0.6 +1.0
265 UNITS
TESTED
Input Bias Current
Over the Common Mode Range
Input Bias Current vs
Differential Input Voltage
TEMPERATURE (°C)
–50
OFFSET VOLTAGE (µV)
50
40
30
20
10
0
–10
–20
–30
–40
–50
0
50
75
1001 G02
–25
25
100
125
LT1001
LT1001A
LT1001A
LT1001
V
S
= ±15V
Warm-Up Drift
Offset Voltage Drift withTemperature
of Representative Units
Typical Distribution of Offset
Voltage Drift with Temperature
5
LT1001
1001fb
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
Common Mode Limit
vs Temperature
TEMPERATURE °C
–50
V
+
–0.2
–0.4
–0.6
–0.8
–1.0
+1.0
+0.8
+0.6
+0.4
+0.2
V
–
25 75
1001 G13
–25 0
50 100 125
COMMON MODE LIMIT (V)
REFERRED TO POWER SUPPLY
V
–
= –1.2 to –4V
V
–
= –12 to –18V
V
+
= 12 to 18V
V
+
= 1.2 to 4V
FREQUENCY (MHz)
0.1 0.2 0.5
VOLTAGE GAIN (dB)
PHASE SHIFT (DEG)
1
1001 G12
PHASE MARGIN –55°C = 63°
125°C = 57°
20
16
12
8
4
0
–4
–8
80
100
120
140
160
180
200
220
2
PHASE 25°C
GAIN 125°C
V
S
= ±15V
GAIN 25°C & –55°C
25°C
PHASE
MARGIN
= 60°
Gain, Phase Shift vs Frequency
FREQUENCY (Hz)
0.1
OPEN LOOP VOLTAGE GAIN (dB)
10M
1001 G11
10 100 10k 1M1
1k
100k
140
120
100
80
60
40
20
0
–20
T
A
= 25°C
V
S
= ±15V
V
S
= ±3V
Open Loop Voltage Gain
Frequency Response
FREQUENCY (Hz)
1
COMMON MODE REJECTION (dB)
140
120
100
80
60
40
20
10
100 1k 10k
1001 G14
100k 1M
V
S
= ±15V
T
A
= 25°C
Common Mode Rejection Ratio
vs Frequency
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
2.0
1.5
1.0
0.5
±9 ±15
1001 G16
±3 ±6
±12
±18 ±21
–55°C
125°C
25°C
Supply Current vs Supply Voltage
LOAD RESISTANCE (Ω)
100 300
OUTPUT SWING (V)
16
12
8
4
0
1000 3k 10k
1001 G17
V
S
= ±15V
T
A
= 25°C
POSITIVE SWING
NEGATIVE SWING
Output Swing vs Load Resistance
TEMPERATURE (°C)
–50
1200k
1000k
800k
600k
400k
200k
0
25 75
1001 G10
–25 0
50 100 125
OPEN LOOP VOLTAGE GAIN (V/V)
V
S
= ±15V, V
O
= ±12V
V
S
= ±3V, V
O
= ±1V
Open Loop Voltage Gain
vs Temperature
TIME FROM OPUTPUT SHORT (MINUTES)
0
SHORT CIRCUIT CURRENT (mA)
SINKING
2
50
40
30
20
10
–10
–20
–30
–40
–50
1001 G18
134
–55°C
–55°C
25°C
25°C
125°C
125°C
V
S
= ±15V
SOURCING
Output Short-Circuit Current
vs Time
FREQUENCY (Hz)
POWER SUPPLY REJECTION (dB)
140
120
100
80
60
40
20
0
1001 G15
0.1
1
10 100 1k 10k 100k
V
S
= ±15V ±1V
p-p
T
A
= 25°C
NEGATIVE SUPPLY
POSITIVE SUPPLY
Power Supply Rejection Ratio
vs Frequency
6
LT1001
1001fb
TYPICAL PERFORMANCE CHARACTERISTICS
U
W
Voltage Follower Overshoot
vs Capacitive Load
Small Signal Transient Response
1001 G22
A
V
= +1, C
L
= 50pF
1001 G19
Large Signal Transient Response
FREQUENCY (kHz)
1
OUTPUT VOLTAGE, PEAK-TO-PEAK (V)
28
24
20
16
12
8
4
0
10 100 1000
1001 G23
V
S
= ±15V
T
A
= 25°C
Maximum Undistorted
Output vs. Frequency
FREQUENCY (Hz)
1
OUTPUT IMPEDANCE (Ω)
100
10
1
0.1
0.01
0.001
10k
1001 G24
10
100
1k
100k
A
V
= 1000
A
V
= +1
I
O
= ±1mA
V
S
= ±15V
T
A
= 25°C
Closed Loop Output Impedance
A
V
= +1, C
L
= 1000pF
1001 G21
Small Signal Transient Response
CAPACITIVE LOAD (pF)
100
PERCENT OVERSHOOT
1001 G20
1000
10,000
100,000
100
80
60
40
20
0
V
S
= ±15V
T
A
= 25°C
V
IN
= 100mV
R
L
> 50k
Application Notes and Test Circuits
The LT1001 series units may be inserted directly into
OP-07, OP-05, 725, 108A or 101A sockets with or without
removal of external frequency compensation or nulling
components. The LT1001 can also be used in 741, LF156
or OP-15 applications provided that the nulling circuitry is
removed.
The LT1001 is specified over a wide range of power supply
voltages from ±3V to ±18V. Operation with lower supplies
is possible down to ±1.2V (two Ni-Cad batteries). How-
ever, with ±1.2V supplies, the device is stable only in
closed loop gains of +2 or higher (or inverting gain of one
or higher).
APPLICATIONS INFORMATION
WUU
U
Unless proper care is exercised, thermocouple effects
caused by temperature gradients across dissimilar metals
at the contacts to the input terminals, can exceed the
inherent drift of the amplifier. Air currents over device
leads should be minimized, package leads should be
short, and the two input leads should be as close together
as possible and maintained at the same temperature.
Test Circuit for Offset Voltage and its Drift with Temperature
–
+
–15V
LT1001
+15V
*50k
*100Ω
*50k
2
3
7
6
V
O
1001 F01
V
O
= 1000V
OS
* RESISTORS MUST HAVE LOW
THERMOELECTRIC POTENTIAL.
** THIS CIRCUIT IS ALSO USED AS THE BURN-IN
CONFIGURATION FOR THE LT1001, WITH SUPPLY
VOLTAGES INCREASED TO ±20V.
4
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LT1001CN8#PBF

Mfr. #:
Buy LT1001CN8#PBF
Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers Prec Op Amp
Lifecycle:
New from this manufacturer.
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