32MB, 64MB, 128MB (x72, SR)
168-PIN SDRAM UDIMM
32, 64, 128MB x 64 SDRAM DIMM Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD5C4_8_16x72AG.fm - Rev. C 6/04 EN
4 ©2004 Micron Technology, Inc. All rights reserved.
Table 6: PIN Descriptions
Pins may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
27, 111, 115 RAS#, CAS#, WE#, Input
Command Inputs: RAS#, CAS#, and WE# (along with S#) define
the command being entered.
42, 79 CK0, CK2 Input
Clock: CK is driven by the system clock. All SDRAM input
signals are sampled on the positive edge of CK. CK also
increments the internal burst counter and controls the output
registers.
128 CKE0 Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the
CK signal. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all device banks
idle) or CLOCK SUSPEND OPERATION (burst access in progress).
CKE is synchronous except after the device enters power-down
and self refresh modes, where CKE becomes asynchronous
until after exiting the same mode. The input buffers, including
CK, are disabled during power-down and self refresh modes,
providing low standby power.
30, 45 S0#, S2# Input
Chip Select: S# enables (registered LOW) and disables
(registered HIGH) the command decoder. All commands are
masked when S# is registered HIGH. S# is considered part of
the command code.
28, 29, 46, 47, 112, 113,
130, 131
DQMB0–DQMB7 Input
Input/Output Mask: DQMB is an input mask signal for write
accesses and an output enable signal for read accesses. Input
data is masked when DQMB is sampled HIGH during a WRITE
cycle. The output buffers are placed in a High-Z state (two-
clock latency) when DQMB is sampled HIGH during a READ
cycle.
39, 122 BA0, BA1 Input
Bank Address: BA0 and BA1 define to which device bank the
ACTIVE, READ, WRITE, or PRECHARGE command is being
applied.
33–38, 117–121, 123,
126 (128MB)
A0–A11
(32MB/64MB)
A0–A12
(128MB)
Input
Address Inputs: Provide the row address for ACTIVE
commands, and the column address and auto prcharge bit
(A10) for READ/WRITE commands, to select one location out of
the memory arrary in the respective device bank. A10 sampled
during a PRECHARGE command determines whether the
PRECHARGE applies to one device bank (A10 LOW – device
bank selected by BA0, BA1) or all device banks (A10 HIGH). The
address inputs also provide the op-code during a MODE
REGISTER SET command.
83 SCL Input
Serial Clock for Presence-Detect: SCL is used to synchronize the
presence-detect data transfer to and from the module.
165-167 SA0–SA2 Input
Presence-Detect Address Inputs: These pins are used to
configure the presence-detect device.
82 SDA Input/Output
Serial Presence-Detect Data: SDA is a bidirectional pin used to
transfer addresses and data into and out of the presence-
detect portion of the module.
2–5, 7–11, 13–17, 19–20,
55–58, 60, 65–67, 69–72,
74–77, 86–89, 91–95, 97–
101, 103–104, 139–142,
144, 149–151, 153–156,
158–161
DQ0–DQ63 Input/Output
Data I/Os: Data bus.
32MB, 64MB, 128MB (x72, SR)
168-PIN SDRAM UDIMM
32, 64, 128MB x 64 SDRAM DIMM Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD5C4_8_16x72AG.fm - Rev. C 6/04 EN
5 ©2004 Micron Technology, Inc. All rights reserved.
21, 22, 52, 53, 105, 106,
136, 137
CB0–CB7 Input/Output
ECC check bits.
6, 18, 26, 40, 41, 49, 59,
73, 84, 90, 102, 110, 124,
133, 143, 157, 168
V
DD Supply
Power Supply: +3.3V ±0.3V.
1, 12, 23, 32, 43, 54, 64,
68, 78, 85, 96, 107, 116,
127, 138, 148, 152, 162
V
SS Supply
Ground.
114, 125, 129, 132, 163 DNU
Do Not Use: These pins are not used on these modules, but are
assigned pins on other modules in this product family.
24, 25, 31, 44, 48, 50, 51,
61, 62,63, 80, 81, 108,
109, 126 (32MB/64MB),
134, 135, 145-147, 164
NC
Not Connected: These pins are not connected on these
modules.
Table 6: PIN Descriptions
Pins may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information
PIN NUMBERS SYMBOL TYPE DESCRIPTION
32MB, 64MB, 128MB (x72, SR)
168-PIN SDRAM UDIMM
32, 64, 128MB x 64 SDRAM DIMM Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD5C4_8_16x72AG.fm - Rev. C 6/04 EN
6 ©2004 Micron Technology, Inc. All rights reserved.
Figure 3: Functional Block Diagram
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQMH
U1
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQMB4
S2#
RAS#
CAS#
CKE0
WE#
RAS#: SDRAMs
CAS#: SDRAMs
CKE: SDRAMs
WE#: SDRAMs
A0-A11: SDRAMs
A0-A12: SDRAMs
BA0-1: SDRAMs
A0-A11(32MB/64MB)
A0-A12(128MB)
BA0-1
DQML CS#
DQMB0
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQMH
U2
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQMB5
DQMB1
DQML CS#
DQMB1
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQMH
U4
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQMB6
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMB2
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQMH
U5
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQM7
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQML CS#
DQMBB3
S0#
DQMH
U3
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DQML CS#
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
VDD
VSS
SDRAMs
SDRAMs
10pF
CK1, CK3
CK0
6.6pF
A0
SA0
SPD
U6
SDA
A1
SA1
A2
SA2
WP
SCL
U1
U2
U3
CK2
13.6pF
U4
U5
Standard modules use the following SDRAM devices:
MT48LC4M16A2TG (32MB); MT48LC8M16A2TG (64MB);
MT48LC16M16A2TG ( 128MB)
Lead-free modules use the following SDRAM devices:
MT48LC4M16A2P (32MB); MT48LC8M16A2P (64MB); MT48LC16M16A2P
(128MB)
Note:
1. All resistor values are 10unless otherwise specified.
2. Per industry standard, Micron modules use various component speed
grades as referenced in the module part numbering guide at
www.micron.com/numberguide
.

MT5LSDT872AG-133G1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE SDRAM 64MB 168UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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