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MT8HTF6464HDY-53EB3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
DDR2 SDRAM SODIMM
MT8HTF3264HDY – 256MB
MT8HTF6464HDY – 512MB
MT8HTF12864HDY – 1GB
Features
•
200-pin, small-outline dual in-line memory module
(SODIMM)
•
Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
•
256MB (32 Meg x 64), 512MB (64 Meg x 64), or 1GB
(128 Meg x 64)
•
V
DD
= 1.8V
•
V
DDSPD
= 1.7–3.6V
•
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
•
Differential data strobe (DQS, DQS#) option
•
4n-bit prefetch architecture
•
Multiple internal device banks for concurrent opera-
tion
•
Programmable CAS latency (CL)
•
Posted CAS additive latency (AL)
•
WRITE latency = READ latency - 1
t
CK
•
Programmable burst lengths (BL): 4 or 8
•
Adjustable data-output drive strength
•
64ms, 8192-cycle refresh
•
On-die termination (ODT)
•
Serial presence detect (SPD) with EEPROM
•
Gold edge contacts
•
Dual rank
Figure 1: 200-Pin SODIMM (MO-224 R/C A)
Module height: 30mm (1.18in)
Options Marking
•
Operating temperature
– Commercial (0°C ≤ T
A
≤ +70°C)
D
– Industrial (–40°C ≤ T
A
≤ +85°C)
1
T
•
Package
–
200-pin DIMM (lead-free) Y
•
Frequency/CL2
–
2.5ns @ CL = 5 (DDR2-800) -80E
–
2.5ns @ CL = 6 (DDR2-800) -800
–
3.0ns @ CL = 5 (DDR2-667) -667
–
3.75ns @ CL = 4 (DDR2-553)
3
-53E
–
5.0ns @ CL = 3 (DDR2-400)
3
-40E
Notes:
1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s) t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 800 800 533 400 12.5 12.5 55
-800 PC2-6400 800 667 533 400 15 15 55
-667 PC2-5300
–
667 553 400 15 15 55
-53E PC2-4200
– –
553 400 15 15 55
-40E PC2-3200
– –
400 400 15 15 55
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 256MB 512MB 1GB
Refresh count 8K 8K 8K
Row address 8K A[12:0] 8K A[12:0] 8K A[12:0]
Device bank address 4 BA[1:0] 4 BA[1:0] 8 BA[2:0]
Device configuration 256Mb (16 Meg x 16) 512Mb (32 Meg x 16) 1Gb (64 Meg x 16)
Column address 512 A[8:0] 1K A[9:0] 1K A[9:0]
Module rank address 2 S#[1:0] 2 S#[1:0] 2 S#[1:0]
Table 3: Part Numbers and Timing Parameters – 256MB Modules
Base device: MT47H16M16,
1
256Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8HTF3264HDY-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF3264HTY-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF3264HDY-53E__ 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF3264HTY-53E__ 256MB 32 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF3264HDY-40E__ 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8HTF3264HTY-40E__ 256MB 32 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H32M16,
1
512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8HTF6464HDY-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF6464HTY-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF6464HDY-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF6464HTY-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF6464HDY-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF6464HTY-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF6464HDY-53E__ 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF6464HTY-53E__ 512MB 64 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF6464HDY-40E__ 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8HTF6464HTY-40E__ 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Table 5: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M16,
1
1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Clock Cycles
(CL-
t
RCD-
t
RP)
MT8HTF12864HDY-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF12864HTY-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5
MT8HTF12864HDY-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864HTY-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6
MT8HTF12864HDY-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF12864HTY-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT8HTF12864HDY-53E__ 1GB 128 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF12864HTY-53E__ 1GB 128 Meg x 64 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT8HTF12864HDY-40E__ 1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
MT8HTF12864HTY-40E__ 1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Notes:
1. The data sheet for the base device can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions.
Consult factory for current revision codes. Example: MT8HTF6464HDY-667
D3.
256MB, 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM
Features
PDF: 09005aef80ebed66
htf8c32_64_128x64hd.pdf - Rev. E 3/10 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

MT8HTF6464HDY-53EB3

Mfr. #:
Buy MT8HTF6464HDY-53EB3
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
Lifecycle:
New from this manufacturer.
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