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VBT6045C-E3/4W

P1-P3P4-P4
VBT6045C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Sep-13
1
Document Number: 89362
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.33 V at I
F
= 10 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
45 V
I
FSM
320 A
V
F
at I
F
= 30 A 0.47 V
T
J
max. 150 °C
Package TO-263AB
Diode variations Common cathode
TO-263AB
1
2
K
PIN 1
PIN 2
K
HEATSINK
VBT6045C
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT6045C UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
60
A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
320 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VBT6045C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Sep-13
2
Document Number: 89362
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 10 A
T
A
= 25 °C
V
F
(1)
0.44 -
V
I
F
= 15 A 0.47 -
I
F
= 30 A 0.54 0.64
I
F
= 10 A
T
A
= 125 °C
0.33 -
I
F
= 15 A 0.37 -
I
F
= 30 A 0.47 0.56
Reverse current per diode V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-3000μA
T
A
= 125 °C 18 50 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT64045C UNIT
Typical thermal resistance
per diode
R
JC
1.5
°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT6045C-E3/4W 1.38 4W 50/tube Tube
TO-263AB VBT6045C-E3/8W 1.38 8W 800/reel Tape and reel
Case Temperature (°C)
Average Forward Rectified Current (A)
70
60
50
40
10
0
100 110 120 130 140 150
30
20
0
2
12
14
16
20
0 5 15 30 35
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
20
D = t
p
/T t
p
T
6
8
10
4
2510
18
VBT6045C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Sep-13
3
Document Number: 89362
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.7
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
0.6
Instantaneous Forward Current (A)
0.1 0.3 0.5
20 40 60 80 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
100
10 000
100 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
10
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Junction to Case
1
Transient Thermal Impedance (°C/W)
TO-263AB
Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
P1-P3P4-P4

VBT6045C-E3/4W

Mfr. #:
Buy VBT6045C-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 60A 45V Dual Low TrenchMOS
Lifecycle:
New from this manufacturer.
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