SBC807-40LT1G

BC807−16L, BC807−25L, BC807−40L
www.onsemi.com
4
TYPICAL CHARACTERISTICS − BC807−16LT1
I
B
, BASE CURRENT (mA)
Figure 5. Saturation Region
100
10
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
T
J
= 25°C
I
C
= -10 mA
I
C
= -100 mA
I
C
= -300 mA
I
C
=
-500 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
BC807−16L, BC807−25L, BC807−40L
www.onsemi.com
5
TYPICAL CHARACTERISTICS − BC807−25LT1
Figure 8. DC Current Gain vs. Collector
Current
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
Figure 11. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1
V
CE
= 1 V
150°C
−55°C
25°C
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 10
150°C
−55°C
25°C
0.4
0.7
1.1
V
CE
= 5 V
150°C
−55°C
25°C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
10001010.1
10
100
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25°C
1000
100
BC807−16L, BC807−25L, BC807−40L
www.onsemi.com
6
TYPICAL CHARACTERISTICS − BC807−25LT1
I
B
, BASE CURRENT (mA)
Figure 13. Saturation Region
100
10
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. Temperature Coefficients
+1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Capacitances
-0.1 -1.0-1.0 -10 -100 -1000
-2.0
-1.0
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01 -0.1 -10 -100-1.0
-10 -100
T
J
= 25°C
I
C
= -10 mA
I
C
= -100 mA
I
C
= -300 mA
I
C
=
-500 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib

SBC807-40LT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS GP XSTR SPCL TR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union