I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision A)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
480 440 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
24 24 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
600 560 mA
Precharge standby current I
DD2N
400 360 mA
Precharge standby ODT current I
DD2NT
480 440 mA
Precharge power-down current I
DD2P
240 200 mA
Precharge quiet standby current I
DD2Q
360 360 mA
Active standby current I
DD3N
440 440 mA
Active standby I
PP
current I
PP3N
24 24 mA
Active power-down current I
DD3P
320 280 mA
Burst read current I
DD4R
1280 1200 mA
Burst write current I
DD4W
1200 1200 mA
Burst refresh current (1x REF) I
DD5B
1800 1800 mA
Burst refresh I
PP
current (1x REF) I
PP5B
240 240 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
240 240 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
280 280 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
200 200 mA
Auto self refresh current (25°C) I
DD6A
160 160 mA
Auto self refresh current (45°C) I
DD6A
200 200 mA
Auto self refresh current (75°C) I
DD6A
280 280 mA
Auto self refresh I
PP
current I
PP6X
40 40 mA
Bank interleave read current I
DD7
1640 1600 mA
Bank interleave read I
PP
current I
PP7
120 120 mA
Maximum power-down current I
DD8
160 160 mA
8GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
CCMTD-1725822587-9885
atf8c1gx64hz.pdf – Rev. F 9/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 14: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision B)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
408 384 360 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
24 24 24 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
504 480 456 mA
Precharge standby current I
DD2N
280 272 264 mA
Precharge standby ODT current I
DD2NT
400 400 360 mA
Precharge power-down current I
DD2P
200 200 200 mA
Precharge quiet standby current I
DD2Q
240 240 240 mA
Active standby current I
DD3N
368 344 320 mA
Active standby I
PP
current I
PP3N
24 24 24 mA
Active power-down current I
DD3P
312 296 280 mA
Burst read current I
DD4R
1168 1080 1000 mA
Burst write current I
DD4W
1056 984 920 mA
Burst refresh current (1x REF) I
DD5B
2000 2000 2000 mA
Burst refresh I
PP
current (1x REF) I
PP5B
224 224 224 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
240 240 240 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
280 280 280 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
160 160 160 mA
Auto self refresh current (25°C) I
DD6A
68.8 68.8 68.8 mA
Auto self refresh current (45°C) I
DD6A
160 160 160 mA
Auto self refresh current (75°C) I
DD6A
240 240 240 mA
Auto self refresh I
PP
current I
PP6X
40 40 40 mA
Bank interleave read current I
DD7
1440 1400 1360 mA
Bank interleave read I
PP
current I
PP7
120 120 120 mA
Maximum power-down current I
DD8
200 200 200 mA
8GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
CCMTD-1725822587-9885
atf8c1gx64hz.pdf – Rev. F 9/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 15: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision D)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 Units
One bank ACTIVATE-PRECHARGE current I
DD0
408 384 mA
One bank ACTIVATE-PRECHARGE, Word Line Boost, I
PP
current I
PP0
24 24 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
504 480 mA
Precharge standby current I
DD2N
280 272 mA
Precharge standby ODT current I
DD2NT
400 400 mA
Precharge power-down current I
DD2P
200 200 mA
Precharge quiet standby current I
DD2Q
240 240 mA
Active standby current I
DD3N
408 384 mA
Active standby I
PP
current I
PP3N
24 24 mA
Active power-down current I
DD3P
312 296 mA
Burst read current I
DD4R
1168 1080 mA
Burst write current I
DD4W
1096 1024 mA
Burst refresh current (1x REF) I
DD5B
2064 2064 mA
Burst refresh I
PP
current (1x REF) I
PP5B
224 224 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
248 248 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
288 288 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
168 168 mA
Auto self refresh current (25°C) I
DD6A
68.8 68.8 mA
Auto self refresh current (45°C) I
DD6A
168 168 mA
Auto self refresh current (75°C) I
DD6A
248 248 mA
Auto self refresh I
PP
current I
PP6X
40 40 mA
Bank interleave read current I
DD7
1440 1400 mA
Bank interleave read I
PP
current I
PP7
120 120 mA
Maximum power-down current I
DD8
200 200 mA
8GB (x64, SR) 260-Pin DDR4 SODIMM
I
DD
Specifications
CCMTD-1725822587-9885
atf8c1gx64hz.pdf – Rev. F 9/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MTA8ATF1G64HZ-2G3B1

Mfr. #:
Manufacturer:
Micron
Description:
IC SDRAM DDR4 8GB 1GX64 FBGA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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