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VSSAF3M6HM3/I

P1-P3P4-P5
VSSAF3M6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-16
1
Document Number: 87514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1)
Free air, mounted on recommended copper pad area
(2)
Mounted on 30 mm x 30 mm pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3 A
V
RRM
60 V
I
FSM
80 A
V
F
at I
F
= 3 A (125 °C) 0.46 V
T
J
max. 175 °C
Package DO-221AC (SlimSMA)
Diode variation Single die
DO-221AC
TMBS
®
SlimSMA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSAF3M6 UNIT
Device marking code 3M6
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum DC forward current
I
F(AV)
(1)
2.5
A
I
F(AV)
(2)
3
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
VSSAF3M6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-16
2
Document Number: 87514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
Notes
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
(2)
The heat generated must be less than thermal conductivity from junction-to-ambient: dP
D
/DT
J
< 1/R
JA
(3)
Mounted on 30 mm x 30 mm pad area
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.49 -
V
I
F
= 3 A 0.54 0.62
I
F
= 1.5 A
T
A
= 125 °C
0.39 -
I
F
= 3 A 0.46 0.54
Reverse current V
R
= 60 V
T
A
= 25 °C
I
R
(2)
-0.3
mA
T
A
= 125 °C 2.0 6.0
Typical junction capacitance 4.0 V, 1 MHz C
J
500 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL VSSAF3M6 UNIT
Typical thermal resistance
R
JA
(1)(2)
115
°C/W
R
JM
(3)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSAF3M6-M3/H 0.032 H 3500 7" diameter plastic tape and reel
VSSAF3M6-M3/I 0.032 I 14 000 13" diameter plastic tape and reel
VSSAF3M6HM3/H
(1)
0.032 H 3500 7" diameter plastic tape and reel
VSSAF3M6HM3/I
(1)
0.032 I 14 000 13" diameter plastic tape and reel
VSSAF3M6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Oct-16
3
Document Number: 87514
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.0
1.0
2.0
3.0
4.0
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Mount Temperature (°C)
R
thJM
= 12 °C/W
R
thJA
= 115 °C/W
0.0
0.5
1.0
1.5
2.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0.10.20.30.40.50.60.70.8
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= -40 °C
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= -40 °C
T
J
= 150 °C
1
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to ambient
P1-P3P4-P5

VSSAF3M6HM3/I

Mfr. #:
Buy VSSAF3M6HM3/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 3A, 60V, Slim SMA AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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