OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MT9HTF12872FZ-667H1N8

P1-P3P4-P6P7-P9P10-P12
Table 11: I
DD
Specifications – 1GB DDR2-667 (Die revision M)
Symbol I
DD_IDLE_0
I
DD_IDLE_1
I
DD_ACTIVE_1
I
DD_ACTIVE_2
I
DD_TRAINING
I
DD_IBIST
I
DD_EI
Units
I
CC
2600 3400 3900 3700 4000 4500 2500 mA
I
DD
916 916 1945 916 916 916 290 mA
Total power 5.8 7.0 9.8 7.5 8.0 8.8 4.5 W
Table 12: I
DD
Specifications – 1GB DDR2-800 (All die revisions)
Symbol I
DD_IDLE_0
I
DD_IDLE_1
I
DD_ACTIVE_1
I
DD_ACTIVE_2
I
DD_TRAINING
I
DD_IBIST
I
DD_EI
Units
I
CC
TBD TBD TBD TBD TBD TBD TBD mA
I
DD
TBD TBD TBD TBD TBD TBD TBD mA
Total power TBD TBD TBD TBD TBD TBD TBD W
Note:
1. Total power is based on maximum voltage levels, I
CC
at 1.575V and I
DD
at 1.9V.
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 13: Serial Presence-Detect EEPROM DC Operating Conditions
Parameter/Condition Symbol Min Max Units
EEPROM and AMB supply voltage V
DDSPD
3 3.6 V
Input high voltage: Logic 1; all inputs V
IH
V
DDSPD
× 0.7 V
DDSPD
+ 0.5 V
Input low voltage: Logic 0; all inputs V
IL
–0.6 V
DDSPD
× 0.3 V
Output low voltage: I
OUT
= 3mA V
OL
– 0.4 V
Input leakage current: V
IN
= GND to V
DD
I
LI
0.10 3 µA
Output leakage current: V
OUT
= GND to V
DD
I
LO
0.05 3 µA
Standby current I
SB
1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz I
CCR
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz I
CCW
2 3 mA
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 – µs
Data-out hold time
t
DH 200 – ns
SDA and SCL fall time
t
F – 300 ns 2
Data-in hold time
t
HD:DAT 0 – µs
Start condition hold time
t
HD:STA 0.6 – µs
Clock HIGH period
t
HIGH 0.6 – µs
Noise suppression time constant at SCL, SDA inputs
t
I – 50 ns
1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Serial Presence-Detect
PDF: 09005aef83de8266
htf9c128x72fz.pdf - Rev. B 4/14 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions (Continued)
Parameter/Condition Symbol Min Max Units Notes
Clock LOW period
t
LOW 1.3 – µs
SDA and SCL rise time
t
R – 0.3 µs 2
SCL clock frequency
f
SCL – 400 kHz
Data-in setup time
t
SU:DAT 100 – ns
Start condition setup time
t
SU:STA 0.6 – µs 3
Stop condition setup time
t
SU:STO 0.6 – µs
WRITE cycle time
t
WRC – 10 ms 4
Notes:
1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1
and the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a
write sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the
WRITE cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to
pull-up resistance, and the EEPROM does not respond to its slave address.
1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Serial Presence-Detect
PDF: 09005aef83de8266
htf9c128x72fz.pdf - Rev. B 4/14 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Module Dimensions
Figure 4: 240-Pin DDR2 FBDIMM
30.5 (1.201)
30.2 (1.189)
Pin 1
17.3 (0.681)
TYP
2.6 (0.102) D
(2X)
5.2 (0.205)
TYP
5.0 (0.197) TYP
123.0 (4.843)
TYP
1.0 (0.039)
TYP
0.8 (0.031)
TYP
1.5 (0.059) R
(4X)
0.75 (0.03) R
Pin 120
Front view
133.50 (5.256)
133.20 (5.244)
67.0 (2.638)
TYP
51.0 (2.01)
TYP
9.5 (0.374)
TYP
Back view
Pin 240
Pin 121
1.37 (0.054)
1.17 (0.046)
5.1 (0.201)
MAX
1.25 (0.0492)
TYP
66.68 (2.63) TYP
0.595 (0.0234) R
2.0 (0.079)
TYP
3.9 (0.153)
TYP
(x2)
120° (2X)
2.18 (0.086) TYP
74.68 (2.94)
TYP
3.05 (0.12) TYP
66.68 (2.63)
TYP
24.95 (0.982)
TYP
Detail A
Detail A
1.19 (0.047)
1.06 (0.042)
1.06 (0.042)
45° x 0.18 (0.0071)
0.5 (0.02) R
(4X)
0.75 (0.03) R 8X
9.9 (0.39)
TYP
(x4)
Front view with heat spreader
Back view with heat spreader
7.68 (0.302)
MAX*
3.1 (0.122) TYP
5.48 (0.216)
TYP
U1 U2
U3
U4 U5
U6 U7 U8 U10 U11
U9
U9
U1 U2
U3
U4 U5
U6 U7 U8 U10 U11
1.37 (0.054)
1.17 (0.046)
*Including clip radius
7.92 (0.312)
Notes:
1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for ad-
ditional design dimensions.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM
Module Dimensions
PDF: 09005aef83de8266
htf9c128x72fz.pdf - Rev. B 4/14 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12

MT9HTF12872FZ-667H1N8

Mfr. #:
Buy MT9HTF12872FZ-667H1N8
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 1GB 240FBDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet