© 2008 Microchip Technology Inc. DS22062B-page 13
MCP14E3/MCP14E4/MCP14E5
FIGURE 4-3: Enable Timing Waveform.
4.4 Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.5A are needed
to charge a 2200 pF load with 18V in 16 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver V
DD
and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
should be used. These capacitors should be placed
close to the driver to minimized circuit board parasitics
and provide a local source for the required current.
4.5 PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP14E3/
MCP14E4/MCP14E5 will help as a radiated noise
shield as well as providing some heat sinking for power
dissipated within the device.
4.6 Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
4.6.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
EQUATION 4-2:
TABLE 4-1: ENABLE PIN LOGIC
MCP14E3 MCP14E4 MCP14E5
ENB_A ENB_B IN A IN B OUT A OUT B OUT A OUT B OUT A OUT B
HHHHL LHHLH
HHHL LHHL LL
HHLHHL LHHH
HHL LHHL LHL
LLXXLLLLLL
5V
0V
ENB_x
V
DD
0V
OUT x
V
EN_H
V
EN_L
90%
10%
t
D3
t
D4
P
T
P
L
P
Q
P
CC
++=
Where:
P
T
= Total power dissipation
P
L
= Load power dissipation
P
Q
= Quiescent power dissipation
P
CC
= Operating power dissipation
P
L
fC
T
× V
DD
2
×=
Where:
f = Switching frequency
C
T
= Total load capacitance
V
DD
= MOSFET driver supply voltage
MCP14E3/MCP14E4/MCP14E5
DS22062B-page 14 © 2008 Microchip Technology Inc.
4.6.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw of the MCP14E3/MCP14E4/MCP14E5
depends upon the state of the input and enable pins.
Refer to the DC Characteristic table for the quiescent
current draw for specific combinations of input and
enable pin states. The quiescent power dissipation is:
EQUATION 4-3:
4.6.3 OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
EQUATION 4-4:
P
Q
I
QH
DI
QL
1 D()×+×()V
DD
×=
Where:
I
QH
= Quiescent current in the high
state
D = Duty cycle
I
QL
= Quiescent current in the low
state
V
DD
= MOSFET driver supply voltage
P
CC
CC f× V
DD
×=
Where:
CC = Cross-conduction constant
(A*sec)
f = Switching frequency
V
DD
= MOSFET driver supply voltage
© 2008 Microchip Technology Inc. DS22062B-page 15
MCP14E3/MCP14E4/MCP14E5
5.0 PACKAGING INFORMATION
5.1 Package Marking Information (Not to Scale)
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil)
Example:
MCP14E3
E/P^^256
0814
8-Lead SOIC (150 mil)
Example:
256
MCP14E3E
8-Lead DFN-S (6x5)
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
MCP14E3
E/MF^^
0814
256
SN^^0814
3
e
3
e
3
e
NNN
XXXXXXXX
XXXXYYWW

MCP14E5-E/MF

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 45A Dual MOSFET Driver
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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