© 2008 Microchip Technology Inc. DS22062B-page 5
MCP14E3/MCP14E4/MCP14E5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
DD
≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 — — V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current I
IN
–10 — +10 µA 0V ≤ V
IN
≤ V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 — — V DC TEST
Low Output Voltage V
OL
— — 0.025 V DC TEST
Output Resistance, High R
OH
—3.06.0Ω I
OUT
= 10 mA, V
DD
= 18V
Output Resistance, Low R
OL
—3.05.0Ω I
OUT
= 10 mA, V
DD
= 18V
Switching Time (Note 1)
Rise Time t
R
—2540nsFigure 4-1, Figure 4-2
C
L
= 2200 pF
Fall Time t
F
—2840nsFigure 4-1, Figure 4-2
C
L
= 2200 pF
Delay Time t
D1
—5070nsFigure 4-1, Figure 4-2
Delay Time t
D2
—5070nsFigure 4-1, Figure 4-2
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage V
EN_H
1.60 2.20 2.90 V V
DD
= 12V, LO to HI Transition
Low-Level Input Voltage V
EN_L
1.30 1.80 2.40 V V
DD
= 12V, HI to LO Transition
Hysteresis V
HYST
—0.40—V
Enable Leakage Current I
ENBL
40 87 115 µA V
DD
= 12V, ENB_A = ENB_B = GND
Propagation Delay Time t
D3
—50—nsFigure 4-3
Propagation Delay Time t
D4
—60—nsFigure 4-3
Power Supply
Supply Voltage V
DD
4.5 — 18.0 V
Supply Current I
DD
—2.03.0mAV
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
—0.81.1mAV
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
—1.52.0mAV
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = High
I
DD
—1.52.0mAV
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = High
I
DD
—1.82.8mAV
IN_A
=3V, V
IN_B
=3V,
ENB_A = ENB_B = Low
I
DD
—0.60.8mAV
IN_A
=0V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
—1.11.8mAV
IN_A
=3V, V
IN_B
=0V,
ENB_A = ENB_B = Low
I
DD
—1.11.8mAV
IN_A
=0V, V
IN_B
=3V,
ENB_A = ENB_B = Low
Note 1: Switching times ensured by design.
