BTA316-800CTQ

BTA316-800CT
3Q Triac
Rev.01 - 26 September 2017 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac
will commutate the full RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C)
without the aid of a snubber. It is used in applications where "high junction operating temperature
capability" is required.
2. Features and benets
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (T
j(max)
= 150 °C)
High immunity to false turn-on by dV/dt
High voltage capability
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature (T
j(max)
= 150 °C)
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
Rectier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
V
DRM
repetitive peak off-state
voltage
800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 131 °C;
Fig. 1; Fig. 2; Fig. 3
16 A
I
TSM
non-repetitive peak on-
state current
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
140 A
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C 150 A
T
j
junction temperature 150 °C
WeEn Semiconductors
BTA316-800CT
3Q Triac
BTA316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017 2 / 12
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C; Fig. 7
2 - 35 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 35 mA
V
T
on-state voltage I
T
= 18 A; T
j
= 25 °C; Fig. 10 - 1.3 1.5 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
500 - - V/μs
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
200 - - V/μs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
8 - - A/ms
5. Pinning information
6. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 T1 main terminal 1
12
mb
3
sym051
T1
G
T2
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main terminal 2
Type number Package
Name Description Version
BTA316-800CT TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
Table 3. Ordering information
7. Marking
Type number Marking codes
BTA316-800CT BTA316-800CT
Table 4. Marking codes
WeEn Semiconductors
BTA316-800CT
3Q Triac
BTA316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017 3 / 12
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
-50 -10 30 70 110
150
0
4
8
12
16
20
T
mb
(°C)
I
T(RMS)
(A)
bidc2-001
131 °C
10
-2
10
-1
110
14
15
16
17
18
19
20
surge duration (s)
I
T(RMS)
(A)
bidc2-002
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50Hz; T
mb
= 131 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
Symbol Parameter Conditions Values Unit
V
DRM
repetitive peak off-state
voltage
800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 131°C;
Fig. 1; Fig. 2; Fig. 3
16 A
I
TSM
non-repetitive peak on-
state current
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
140 A
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C 150 A
I
2
t I
2
t for fusing t
p
= 10ms; sine wave 98 A
2
s
dI
T
/dt rate of rise of on-state
current
I
G
= 70mA 100 A/μs
I
GM
peak gate current 2 A
P
GM
peak gate power 5 W
P
G(AV)
average gate power over any 20 ms period 0.5 W
T
stg
storage temperature -40 to 150 °C
T
j
junction temperature 150 °C

BTA316-800CTQ

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA316-800CTQ/SIL3P/STANDARD MARKING * HORIZONTAL, RAIL PACK
Lifecycle:
New from this manufacturer.
Delivery:
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