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BTA316-800CTQ
P1-P3
P4-P6
P7-P9
P10-P12
WeEn Semiconductors
BT
A316-800CT
3Q T
riac
BT
A316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017
4 / 12
048
12
16
20
0
4
8
12
16
20
24
I
T(RMS)
(A)
P
tot
(W)
bidc2-003
conduction
angle
(degrees)
form
factor
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.1
10
α
120
90
60
30
α = 180
°
°
°
°
°
150
146.4
132
128.4
mb(max
)
(°C)
139.2
142.8
135.6
T
11
01
0
2
10
3
0
40
80
120
160
number of cycles (n)
I
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
bidc2-004
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
2
10
3
10
4
t
p
(s)
I
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
bidc2-005
(1)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(A
V)
Fig. 3. T
otal power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. T
otal power dissipation as a function of RMS on-state current; maximum values
WeEn Semiconductors
BT
A316-800CT
3Q T
riac
BT
A316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017
5 / 12
9. Thermal characteristics
T
able 5. Thermal characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
full cycle;
Fig. 6
-
-
0.9
K/W
half cycle;
Fig. 6
-
-
1.3
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
55
-
K/W
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
11
0
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-mb)
(K/W)
P
t
t
p
T
t
p
δ =
T
bidc2-006
Bidirectional (full cycle)
Unidirectiona (half cycle)
Fig. 6. T
ransient thermal impedance from junction to mounting base as a function of pulse duration
WeEn Semiconductors
BT
A316-800CT
3Q T
riac
BT
A316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017
6 / 12
10. Characteristics
T
able 7. Characteristics
Symbol
Parameter
Conditions
Min
Ty
p
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V
; I
T
= 0.1
A; T2+ G+;
T
j
= 25 °C;
Fig. 7
2
-
35
mA
V
D
= 12 V
; I
T
= 0.1
A; T2+ G-;
T
j
= 25 °C;
Fig. 7
2
-
35
mA
V
D
= 12 V
; I
T
= 0.1
A; T2- G-;
T
j
= 25 °C;
Fig. 7
2
-
35
mA
I
L
latching current
V
D
= 12 V
; I
T
= 0.1
A; T2+ G+;
T
j
= 25 °C;
Fig. 8
-
-
50
mA
V
D
= 12 V
; I
T
= 0.1
A; T2+ G-;
T
j
= 25 °C;
Fig. 8
-
-
60
mA
V
D
= 12 V
; I
T
= 0.1
A; T2- G-;
T
j
= 25 °C;
Fig. 8
-
-
50
mA
I
H
holding current
V
D
= 12 V
; T
j
= 25 °C;
Fig. 9
-
-
35
mA
V
T
on-state voltage
I
T
= 18
A; T
j
= 25 °C;
Fig. 10
-
1.3
1.5
V
V
GT
gate trigger voltage
V
D
= 12 V
; I
T
= 0.1
A; T
j
= 25 °C;
Fig. 1
1
-
0.8
1
V
V
D
= 400 V
; I
T
= 0.1
A; T
j
= 150 °C;
Fig. 1
1
0.25
0.4
-
V
I
D
off-state current
V
D
= 800 V
; T
j
= 25 °C
-
-
10
μA
V
D
= 800 V
; T
j
= 150 °C
-
-
2
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V
; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
500
-
-
V/μs
V
DM
= 536 V
; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
200
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V
; T
j
= 150 °C; I
T(RMS)
= 16
A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
8
-
-
A/ms
P1-P3
P4-P6
P7-P9
P10-P12
BTA316-800CTQ
Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA316-800CTQ/SIL3P/STANDARD MARKING * HORIZONTAL, RAIL PACK
Lifecycle:
New from this manufacturer.
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