BTA316-800CTQ

WeEn Semiconductors
BTA316-800CT
3Q Triac
BTA316-800CT
Product
data
sheet
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information
provided in
this
document
is
subject
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legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017 4 / 12
04812 16 20
0
4
8
12
16
20
24
I
T(RMS)
(A)
P
tot
(W)
bidc2-003
conduction
angle
(degrees)
form
factor
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
120
90
60
30
α = 180
°
°
°
°
°
150
146.4
132
128.4
mb(max
)
(°C)
139.2
142.8
135.6
T
11010
2
10
3
0
40
80
120
160
number of cycles (n)
I
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
bidc2-004
10
-5
10
-4
10
-3
10
-2
10
10
10
2
10
3
10
4
t
(s)
TSM
(A)
I
T
T
j(init)
= 25 °C max
I
TSM
T
t
(1)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
WeEn Semiconductors
BTA316-800CT
3Q Triac
BTA316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017 5 / 12
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
full cycle; Fig. 6 - - 0.9 K/W
half cycle; Fig. 6 - - 1.3 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air - 55 - K/W
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
110
10
-3
10
-2
10
-1
1
10
t
p
(s)
Z
th(j-mb)
(K/W)
P
t
t
p
T
t
p
δ =
T
bidc2-006
Bidirectional (full cycle)
Unidirectiona (half cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
WeEn Semiconductors
BTA316-800CT
3Q Triac
BTA316-800CT
Product
data
sheet
All
information
provided in
this
document
is
subject
to
legal
disclaimers.
©
WeEn
Semiconductors
Co.,
Ltd.
2017.
All
rights
reserved
26
September
2017 6 / 12
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
I
L
latching current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 50 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 60 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 50 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 35 mA
V
T
on-state voltage I
T
= 18 A; T
j
= 25 °C; Fig. 10 - 1.3 1.5 V
V
GT
gate trigger voltage V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.8 1 V
V
D
= 400 V; I
T
= 0.1 A; T
j
= 150 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 25 °C - - 10 μA
V
D
= 800 V; T
j
= 150 °C - - 2 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
500 - - V/μs
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
200 - - V/μs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
8 - - A/ms

BTA316-800CTQ

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs BTA316-800CTQ/SIL3P/STANDARD MARKING * HORIZONTAL, RAIL PACK
Lifecycle:
New from this manufacturer.
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