MAX15018/MAX15019
125V/3A, High-Speed,
Half-Bridge MOSFET Drivers
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= 8V to 12.6V, V
HS
= V
GND
= 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
= V
BST
= 12V and T
A
= +25°C.) (Note 1)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
=
V
BST
= +12V)
No C
L
1
C
L
= 1000pF 5
C
L
= 5000pF 25
Rise Time t
R
C
L
= 10,000pF 50
ns
No C
L
1
C
L
= 1000pF 5
C
L
= 5000pF 20
Fall Time t
F
C
L
= 10,000pF 40
ns
MAX15018A/
MAX15018B (CMOS)
33 60
Turn-On Propagation Delay Time t
D_ON
Figure 1,
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
36 66
ns
MAX15018A/
MAX15018B (CMOS)
30 55
Turn-Off Propagation Delay Time t
D_OFF
Figure 1,
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
36 66
ns
MAX15018A/
MAX15018B (CMOS)
15
Delay Matching Between High-Side
Turn-On to Low-Side Turn-On
t
MATCH1
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
16
ns
MAX15018A/
MAX15018B (CMOS)
15
Delay Matching Between High-Side
Turn-Off to Low-Side Turn-Off
t
MATCH2
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
16
ns
MAX15018A/
MAX15018B (CMOS)
28
Delay Matching Between High-Side
Turn-Off to Low-Side Turn-On
t
MATCH3
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
16
ns
MAX15018A/
MAX15018B (CMOS)
28
Delay Matching Between High-Side
Turn-On to Low-Side Turn-Off
t
MATCH4
C
L
= 1000pF
(Note 2)
MAX15019A/
MAX15019B (TTL)
16
ns
Minimum Input Pulse Width for
Output Change
t
PW
20 ns
Note 1: All devices are 100% production tested at T
A
= T
J
= +125°C. Limits over temperature are guaranteed by design and char-
acterization.
Note 2: Guaranteed by design, not production tested.
