MAX5054–MAX5057
The logic inputs are high impedance and must not be left
floating. If the inputs are left open, OUT_ can go to an
undefined state as soon as V
DD
rises above the UVLO
threshold. Therefore, the PWM output from the controller
must assume proper state when powering up the device.
The MAX5054 has two logic inputs per driver providing
greater flexibility in controlling the MOSFET. Use IN_+ for
noninverting logic and IN_- for inverting logic operation.
Connect IN_+ to V
DD
and IN_- to GND if not used.
Alternatively, the unused input can be used as an
ON/OFF function. Use IN_+ for active-low shutdown logic
and IN_- for active-high shutdown logic (see Figure 4).
See Table 1 for all possible input combinations.
Driver Output
The MAX5054–MAX5057 have low R
DS(ON)
p-channel
and n-channel devices (totem pole) in the output stage
for the fast turn-on and turn-off high gate-charge switch-
ing MOSFETs. The peak source or sink current is typically
4A. The OUT_ voltage is approximately equal to V
DD
when in high state and is ground when in low state. The
driver R
DS(ON)
is lower at higher V
DD
, thus higher
source-/sink-current capability and faster switching
speeds. The propagation delays from the noninverting
and inverting logic inputs to outputs are matched to 2ns.
The break-before-make logic avoids any cross-conduc-
tion between the internal p- and n-channel devices, and
eliminates shoot-through currents reducing the quiescent
supply current.
Applications Information
RLC Series Circuit
The driver’s R
DS(ON)
(R
ON
), internal bond and lead
inductance (L
P
), trace inductance (L
S
), gate inductance
(L
G
), and gate capacitance (C
G
) form a series RLC
circuit with a second-order characteristic equation. The
series RLC circuit has an undamped natural frequency
(ϖ
0
) and a damping ratio (ζ) where:
The damping ratio needs to be greater than 0.5 (ideally 1)
to avoid ringing. Add a small resistor (R
GATE
) in series
with the gate when driving a very low gate-charge
MOSFET, or when the driver is placed away from the
MOSFET. Use the following equation to calculate the
series resistor:
L
P
can be approximated as 3nH and 2nH for SO and
TDFN packages, respectively. L
S
is on the order of
20nH/in. Verify L
G
with the MOSFET vendor.
R
LLL
C
R
GATE
PSG
G
ON
++
()
ϖ
ξ
0
1
2
=
++ ×
=
×
++
()
()
LLL C
R
LLL
C
PSG G
ON
PSG
G
4A, 20ns, Dual MOSFET Drivers
10 ______________________________________________________________________________________
MAX5054A
V
DD
GND
INA-
INA+ OUTA
PWM
INPUT
ON
OFF
Figure 4. Unused Input as an ON/OFF Function (1/2 MAX5054A)
Table 1. MAX5054 Truth Table
INA+/INB+ INA-/INB- OUTA/OUTB
Low Low Low
Low High Low
High Low High
High High Low
Table 2. MAX5055/MAX5056/MAX5057
Truth Table
NONINVERTING
IN_+ OUT_
Low Low
High High
INVERTING
IN_- OUT_
Low High
High Low
Supply Bypassing and Grounding
Pay extra attention to bypassing and grounding the
MAX5054–MAX5057. Peak supply and output currents
may exceed 8A when both drivers drive large external
capacitive loads in phase. Supply voltage drops and
ground shifts create forms of negative feedback for
inverters and may degrade the delay and transition times.
Ground shifts due to insufficient device grounding may
also disturb other circuits sharing the same AC ground
return path. Any series inductance in the V
DD
, OUT_,
and/or GND paths can cause oscillations due to the very
high di/dt when switching the MAX5054–MAX5057 with
any capacitive load. Place one or more 0.1µF ceramic
capacitors in parallel as close to the device as possible to
bypass V
DD
to GND. Use a ground plane to minimize
ground return resistance and series inductance. Place
the external MOSFET as close as possible to the
MAX5054–MAX5057 to further minimize board induc-
tance and AC path impedance.
Power Dissipation
Power dissipation of the MAX5054–MAX5057 consists
of three components: caused by the quiescent current,
capacitive charge/discharge of internal nodes, and the
output current (either capacitive or resistive load).
Maintain the sum of these components below the maxi-
mum power dissipation limit.
The current required to charge and discharge the internal
nodes is frequency dependent (see the Supply Current
vs. Supply Voltage graph in the
Typical Operating
Characteristics
). The power dissipation (P
Q
) due to the
quiescent switching supply current (I
DD-SW
) per driver
can be calculated as:
P
Q
= V
DD
x I
DD-SW
For capacitive loads, use the following equation to esti-
mate the power dissipation per driver:
P
CLOAD
= C
LOAD
x (V
DD
)
2
x f
SW
where C
LOAD
is the capacitive load, V
DD
is the supply
voltage, and f
SW
is the switching frequency.
Calculate the total power dissipation (P
T
) per driver as
follows:
P
T
= P
Q
+ P
CLOAD
Use the following equation to estimate the MAX5054–
MAX5057 total power dissipation per driver when driving
a ground-referenced resistive load:
P
T
= P
Q
+ P
RLOAD
P
RLOAD
= D x R
ON(MAX)
x I
LOAD
2
where D (duty cycle) is the fraction of the period the
MAX5054–MAX5057’s output pulls high duty cycle,
R
ON(MAX)
is the maximum on-resistance of the device
with the output high, and I
LOAD
is the output load current
of the MAX5054–MAX5057.
Layout Information
The MAX5054–MAX5057 MOSFET drivers source and
sink large currents to create very fast rising and falling
edges at the gate of the switching MOSFET. The high
di/dt can cause unacceptable ringing if the trace
lengths and impedances are not well controlled. Use the
following PC board layout guidelines when designing
with the MAX5054–MAX5057:
Place one or more 0.1µF decoupling ceramic
capacitors from V
DD
to GND as close to the device
as possible. Connect V
DD
and GND to large copper
areas. Place one bulk capacitor of 10µF (min) on
the PC board with a low resistance path to the V
DD
input and GND of the MAX5054–MAX5057.
Two AC current loops form between the device and
the gate of the driven MOSFET. The MOSFET looks
like a large capacitance from gate to source when the
gate pulls low. The active current loop is from the
MOSFET gate to OUT_ of the MAX5054–MAX5057, to
GND of the MAX5054–MAX5057, and to the source of
the MOSFET. When the gate of the MOSFET pulls
high, the active current is from the V
DD
terminal of the
decoupling capacitor, to V
DD
of the MAX5054–
MAX5057, to OUT_ of the MAX5054–MAX5057, to the
MOSFET gate, to the MOSFET source, and to the
negative terminal of the decoupling capacitor. Both
charging current and discharging current loops are
important. Minimize the physical distance and the
impedance in these AC current paths.
Keep the device as close to the MOSFET as possible.
In a multilayer PC board, the inner layers should
consist of a GND plane containing the discharging
and charging current loops.
Pay extra attention to the ground loop and use a
low-impedance source when using a TTL logic-
input device. Fast fall time at OUT_ may corrupt the
input during transition.
MAX5054–MAX5057
4A, 20ns, Dual MOSFET Drivers
______________________________________________________________________________________ 11
MAX5054–MAX5057
Exposed Pad
Both the SO-EP and TDFN-EP packages have an
exposed pad on the bottom of their package. These
pads are internally connected to GND. For the best
thermal conductivity, solder the exposed pad to the
ground plane to dissipate 1.5W and 1.9W in SO-EP and
TDFN-EP packages, respectively. Do not use the
ground-connected pads as the only electrical ground
connection or ground return. Use GND (pin 3) as the
primary electrical ground connection.
4A, 20ns, Dual MOSFET Drivers
12 ______________________________________________________________________________________
Additional Application Circuits
MAX5054
INA+
INA-
INB+
INB-
OUTB
OUTA
V
DD
GND
V
DD
PWM IN
PWM IN
MAX5054
INA+
INA-
INB+
INB-
OUTB
OUTA
V
DD
GND
PWM IN
V
OUT
V
IN
Figure 5. Push-Pull Converter with Synchronous Rectification Drive Using MAX5054

MAX5055AASA+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 4A 20ns Dual MOSFET Drivers
Lifecycle:
New from this manufacturer.
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