VS-ST380C06C0L

VS-ST380C Series
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Vishay Semiconductors
Revision: 20-Dec-13
4
Document Number: 94410
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 8 0 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST380C..C Series
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST38 0 C . . C Se r ie s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST3 8 0 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 8 0 C . . C Se r i e s
T = 1 2 5 ° C
J
0
400
800
1200
1600
2000
2400
2800
0 400 800 1200 1600 2000
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST380C..C Series
T = 1 25 ° C
J
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
5
Document Number: 94410
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
6000
7000
8000
9000
10000
11000
12000
13000
14000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Ha lf Sine Wave On-state Current (A)
Initial T = 125°C
@ 6 0 Hz 0 . 0 0 8 3 s
@ 50 Hz 0.0100 s
J
ST380C..C Series
At Any Rat ed Loa d Cond it io n And Wit h
Rated V Applied Following Surge.
RRM
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
0.01 0.1 1
Pulse Tra in Dura t io n ( s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Cond uc tion Ma y Not Be Maint ained.
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Volta g e Re a p plied
Ra t e d V Re a p p l i e d
RRM
J
ST3 8 0 C . . C Se r i e s
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST3 8 0 C . . C Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJ-hs
ST3 8 0 C . . C Se r i e s
St e a d y St a t e V a l u e
R = 0.09 K/ W
(Single Side Cooled)
R = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
Transient Thermal Impedance Z (K/ W)
VS-ST380C Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-13
6
Document Number: 94410
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2)
(3)
Instantaneous Gate Current (A)
Inst a nt a n e ous Ga t e Vo lt a g e (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66ms
Rectangular gate pulse
De vice : ST380C..C Series
(4)
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075

VS-ST380C06C0L

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - E-PUK
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