TwinDie 1.2V DDR4 SDRAM
MT40A4G4 – 128 Meg x 4 x 16 Banks x 2 Ranks
MT40A2G8 – 64 Meg x 8 x 16 Banks x 2 Ranks
Description
The 16Gb (TwinDie) DDR4 SDRAM uses
Micron’s 8Gb DDR4 SDRAM die (essentially two ranks
of the 8Gb DDR4 SDRAM). Refer to Micron’s 8Gb
DDR4 SDRAM data sheet for the specifications not in-
cluded in this document. Specifications for base part
number MT40A2G4 correlate to TwinDie manufactur-
ing part number MT40A4G4; specifications for base
part number MT40A1G8 correlate to TwinDie manu-
facturing part number MT40A2G8.
Features
Uses 8Gb Micron die
Two ranks (includes dual CS#, ODT, and CKE balls)
Each rank has 4 groups of 4 internal banks for con-
current operation
V
DD
= V
DDQ
= 1.2V (1.14–1.26V)
1.2V V
DDQ
-terminated I/O
JEDEC-standard ball-out
Low-profile package
T
C
of 0°C to 95°C
0°C to 85°C: 8192 refresh cycles in 64ms
85°C to 95°C: 8192 refresh cycles in 32ms
Options Marking
Configuration
128 Meg x 4 x 16 banks x 2 ranks 4G4
64 Meg x 8 x 16 banks x 2 ranks 2G8
FBGA package (Pb-free)
78-ball FBGA
(9.5mm x 13mm x 1.2mm) Die Rev :A
FSE
78-ball FBGA
(8.0mm x 12mm x 1.2mm) Die Rev :B
NRE
Timing – cycle time
1
0.750ns @ CL = 18 (DDR4-2666) -075E
0.833ns @ CL = 16 (DDR4-2400) -083E
0.833ns @ CL = 17 (DDR4-2400) -083
0.937ns @ CL = 15 (DDR4-2133) -093E
0.937ns @ CL = 16 (DDR4-2133) -093
Self refresh
Standard None
Operating temperature
Commercial (0°C T
C
95°C) None
Revision :A
:B
Note:
1. CL = CAS (READ) latency.
Table 1: Key Timing Parameters
Speed Grade
Data Rate
(MT/s) Target
t
RCD-
t
RP-CL
t
RCD (ns)
t
RP (ns) CL (ns)
-075E
1
2666 18-18-18 13.5 13.5 13.5
-083E
2
2400 16-16-16 13.32 13.32 13.32
-083
2
2400 17-17-17 14.16 14.16 14.16
-093E 2133 15-15-15 14.06 14.06 14.06
-093 2133 16-16-16 15 15 15
Notes:
1. Backward compatible to 1600, CL = 11; 1866, CL = 13; 2133, CL = 15; and 2400, CL = 17.
2. Backward compatible to 2133, CL = 15 (-093E).
16Gb: x4, x8 TwinDie DDR4 SDRAM
Description
PDF: 09005aef85fd40a1
DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Table 2: Addressing
Parameter 4096 Meg x 4 2048 Meg x 8
Configuration 128 Meg x 4 x 16 banks x 2 ranks 64 Meg x 8 x 16 banks x 2 ranks
Bank group address BG[1:0] BG[1:0]
Bank count per group 4 4
Bank address in bank group BA[1:0] BA[1:0]
Row address 128K A[16:0] 64K A[15:0]
Column address 1K A[9:0] 1K A[9:0]
16Gb: x4, x8 TwinDie DDR4 SDRAM
Description
PDF: 09005aef85fd40a1
DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Ball Assignments and Descriptions
Figure 1: 78-Ball FBGA Ball Assignments (Top View)
1 2 3 4 6 7 8 95
V
DD
V
PP
V
DDQ
V
SSQ
V
SS
V
DD
V
SS
V
DD
V
REFCA
V
SS
RESET_n
V
DD
V
SS
V
SSQ
V
DDQ
DQ0
DQ4/NC
V
DDQ
C2/ODT1
C0/CKE1
WE_n/A14
BG0
BA0
A6
A8
A11
V
SSQ
V
DDQ
V
SS
DQ5/NC
V
DDQ
CK_c
C1/CS1_n
RAS_n/A16
BG1
BA1
A5
A7
A13
V
SSQ
ZQ
V
DDQ
V
SSQ
V
SS
V
DD
RFU/TEN
V
SS
V
DD
V
SS
ALERT_n
V
PP
V
DD
A
B
C
D
E
F
G
H
J
K
L
M
N
A
B
C
D
E
F
G
H
J
K
L
M
N
NF, NF/DM_n/
DBI_n/TDQS_t
DQ1
V
DD
DQ3
DQ7/NC
CK_t
CS_n
CAS_n/A15
A12/BC_n
A3
A1
A9
A17/NC
NF, NF/
TDQS_c
DQS_c
DQS_t
DQ2
DQ6/NC
ODT
CKE
ACT_n
A10/AP
A4
A0
A2
PAR
Notes:
1. See the FBGA 78-Ball Descriptions table.
2. Dark balls (with ring) designate balls that are specific to controlling the second die of
the TwinDie package when compared to a monolithic package.
3. A comma “,” separates the configuration; a slash “/” defines a selectable function. For
example: Ball A7 = NF, NF/DM_n/DBI_n/TDQS_t where NF applies to the x4 configuration
only. NF/DM_n/DBI_n/TDQS_t applies to the x8 configuration only and is selectable be-
tween NF, DM_n, DBI_n, or TDQS_t via MRS.
16Gb: x4, x8 TwinDie DDR4 SDRAM
Ball Assignments and Descriptions
PDF: 09005aef85fd40a1
DDR4_16Gb_x4_x8_2CS_TwinDie.pdf - Rev. D 12/16 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.

MT40A2G8FSE-083E:A TR

Mfr. #:
Manufacturer:
Micron
Description:
DRAM DDR4 16G 2GX8 FBGA DDP
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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