VS-ST1000C24K0

VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
1
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Phase Control Thyristors
(Hockey PUK Version), 1473 A
FEATURES
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey PUK
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
DC motor controls
Controlled DC power supplies
AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
Package A-24 (K-PUK)
Diode variation Single SCR
I
T(AV)
1473 A
V
DRM
/V
RRM
1200 V, 1600 V, 1800 V, 2000 V,
2200 V, 2400 V
V
TM
1.80 V
I
GT
100 mA
T
J
-40 °C to 125 °C
A-24 (K-PUK)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
1473 A
T
hs
55 °C
I
T(RMS)
2913 A
T
hs
25 °C
I
TSM
50 Hz 20.0
A
60 Hz 21.2
I
2
t
50 Hz 2000
kA
2
s
60 Hz 1865
I
2
t 20 000 kA
2
s
V
DRM
/V
RRM
Range 1200 to 2400 V
t
q
Typical 300 μs
T
J
Range -40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
VS-ST1000C..K
12 1200 1300
100
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
22 2200 2300
24 2400 2500
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
2
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
Double side (single side) cooled
1473 (630) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 6540 A
Maximum peak, one-cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
20.0
kA
t = 8.3 ms 21.2
t = 10 ms
100 % V
RRM
reapplied
17.0
t = 8.3 ms 18.1
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
2000
kA
2
s
t = 8.3 ms 1865
t = 10 ms
100 % V
RRM
reapplied
1445
t = 8.3 ms 1360
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA
2
s
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.950
V
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.024
Low level value of on-state slope resistance r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
), T
J
= T
J
maximum 0.283
m
High level value of on-state slope resistance r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 0.265
Maximum on-state voltage drop V
TM
I
pk
= 3000 A, T
J
= 125 °C, t
p
= 10 ms sine pulse 1.80 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current I
L
1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20 , t
r
1 μs
T
J
= T
J
maximum, anode voltage 80 % V
DRM
1000 A/μs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.9
μs
Typical turn-off time t
q
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
p
= 500 μs
300
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/μs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 100 mA
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
3
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 16
W
Maximum peak average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 3
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms
3.0 A
Maximum peak positive gate voltage +V
GM
20
V
Maximum peak negative gate voltage -V
GM
5.0
DC gate current required to trigger I
GT
T
J
= -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mAT
J
= 25 °C 100 200
T
J
= 125 °C 50 -
DC gate voltage required to trigger V
GT
T
J
= -40 °C 1.4 -
VT
J
= 25 °C 1.1 3.0
T
J
= 125 °C 0.9 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
10 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
J
-40 to +125
°C
Maximum storage temperature range T
Stg
-40 to +150
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
DC operation single side cooled 0.042
K/W
DC operation double side cooled 0.021
Maximum thermal resistance,
case to heatsink
R
thC-hs
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 %
24 500
(2500)
N
(kg)
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet A-24 (K-PUK)
R
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
T
J
= T
J
maximum K/W
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012

VS-ST1000C24K0

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 2400 Volt 1473 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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