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VS-ST1000C24K0

P1-P3P4-P6P7-P8
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
4
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-State Current (A)
Maximum Allowable Heatsink Temperature (°C)
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
60°
90°
Conduction Angle
ST1000C..K series
(single side cooled)
R (DC ) = 0.042 K/W
thJ-hs
30°
120°
180°
Average On-State Current (A)
Maximum Allowable Heatsink Temperature (°
C)
70
80
90
100
110
120
130
0 200 400 600 800 1000
Conduction Period
ST1000C..K Series
(
sing le side cooled)
R (DC ) = 0.042 K/W
thJ-hs
DC
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600
30˚
60˚
90˚
120˚
180˚
Conduction Angle
ST1000C..K Series
(double side cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-State Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000 2400
DC
30˚
60˚
90˚
120˚
180˚
Conduction Period
ST1000C..K series
(double side cooled)
R (DC) = 0.021 K/W
thJ-hs
Average On-State Current (A)
Maximum Average On-State Power Loss (W)
0
500
1000
1500
2000
2500
3000
0 400 800 1200 1600
RMS limit
Conduction Angle
180˚
120˚
90˚
60˚
30˚
ST1000C..K series
T = 125˚C
J
Average On-State Current (A)
Maximum Average On-State Power Loss (W)
0
500
1000
1500
2000
2500
3000
3500
4000
0 500 1000 1500 2000 2500
DC
180˚
120˚
90˚
60˚
30˚
RMS limit
Conduction period
ST1000C..K series
T = 125 ˚C
J
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
5
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
6000
8000
10 000
12 000
14 000
16 000
18 000
1 10 100
ST1000C..K series
Initial T = 125 ˚C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
J
At any rated load condition and with
rated V
RRM
applied following surge.
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
6000
8000
10 000
12 000
14 000
16 000
18 000
20 000
22 000
0.01 0.1 1
Maximum non repetitive surge current
vs. pulse train duration.
Control of conduction may not be maintained.
ST1000C..K series
Initial T
J
= 125 °C
No voltage reapplied
Rated V reapplied
RRM
Instantaneous On-State Voltage (V)
Instantaneous On-State Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJ-hs
(K/W)
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Steady state value
R = 0.42 K/W
(single side cooled)
R = 0.21 K/W
(double side cooled)
(DC operation)
ST1000C..K series
thJ-hs
thJ-hs
VS-ST1000C..K Series
www.vishay.com
Vishay Semiconductors
Revision: 14-Mar-17
6
Document Number: 93714
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95081
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
j
= 25 °C
T
j
= 125 °C
T
j
= -40 °C
(1)
(2) (3)
a) Recommended load line for
b) Recommended load line for
>= 30 % rated di/dt : 10 V, 10 Ω
Frequency limited by PG(AV)
rated di/dt : 20 V, 10 Ω; t
r
± 1 µs
t
r
<= 1 µs
Rectangular gate pulse
(1) PGM = 16 W, tp = 4 ms
(2) PGM = 30 W, t
p = 2 ms
(3) PGM = 60 W, t
p = 1 ms
Device: ST100C..K series
- Thyristor
1 - Vishay Semiconductors product
2
- Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
9
8
- Critical dV/dt:
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- K = PUK case A-24 (K-PUK)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
none = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
5
1
3
2
4 6 7 8 9
V
S-
100
0C24K1-
P1-P3P4-P6P7-P8

VS-ST1000C24K0

Mfr. #:
Buy VS-ST1000C24K0
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules 2400 Volt 1473 Amp
Lifecycle:
New from this manufacturer.
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