Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 9: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 10: Operating Conditions
Symbol Parameter Min Nom Max Units Notes
V
DD
V
DD
supply voltage 1.425 1.5 1.575 V
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage – command address
bus
0.483 x V
DD
0.5 x V
DD
0.517 x V
DD
V 1
I
I
Input leakage current;
Any input 0V V
IN
V
DD
;
V
REF
input 0V V
IN
0.95V
(All other pins not under test = 0V)
Address inputs
RAS#, CAS#,
WE#, BA
–32 0 32 µA
S#, CKE, ODT,
CK, CK#
–16 0 16
DM –4 0 4
I
OZ
Output leakage current;
0V V
OUT
V
DDQ
; DQs and ODT are
disabled
DQ, DQS, DQS# –10 0 10 µA
I
VREF
V
REF
leakage current; V
REF
= valid V
REF
level –16 0 16 µA
T
A
Module ambient operating tempera-
ture
Commercial 0 70 °C 2, 3
Industrial –40 85 °C
T
C
DDR3 SDRAM component case oper-
ating temperature
Commercial 0 95 °C 2, 3, 4
Industrial –40 95 °C
Notes:
1. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,”
available on Micron’s Web site.
4. The refresh rate is required to double when 85°C < T
C
95°C.
2GB, 4GB, 8GB (x64, DR) 240-Pin DDR3 UDIMM
Electrical Specifications
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB, 8GB (x64, DR) 240-Pin DDR3 UDIMM
DRAM Operating Conditions
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
656 656 616 576 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
816 816 776 736 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
560 480 480 400 mA
Precharge quiet standby current I
DD2Q
2
720 640 560 560 mA
Precharge standby current I
DD2N
2
800 720 640 560 mA
Precharge standby ODT current I
DD2NT
2
576 536 496 456 mA
Active power-down current I
DD3P
2
560 560 480 480 mA
Active standby current I
DD3N
2
800 720 640 640 mA
Burst read operating current I
DD4R
1
1336 1216 1096 936 mA
Burst write operating current I
DD4W
1
1376 1256 1096 976 mA
Refresh current I
DD5B
1
1496 1456 1416 1376 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
128 128 128 128 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
160 160 160 160 mA
All banks interleaved read current I
DD7
1
2160 2056 1976 1656 mA
Reset current I
DD8
2
224 224 224 224 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB, 8GB (x64, DR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837cdd2d
jtf16c256_512_1gx64az.pdf - Rev. I 04/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.

MT16JTF51264AZ-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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