Table 13: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
696 656 616 576 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
776 736 696 656 mA
Precharge power-down current: Slow exit I
DD2P0
2
192 192 192 192 mA
Precharge power-down current: Fast exit I
DD2P1
2
672 592 512 432 mA
Precharge quiet standby current I
DD2Q
2
720 640 560 480 mA
Precharge standby current I
DD2N
2
768 688 608 528 mA
Precharge standby ODT current I
DD2NT
2
496 456 416 376 mA
Active power-down current I
DD3P
2
880 800 720 640 mA
Active standby current I
DD3N
2
960 880 800 720 mA
Burst read operating current I
DD4R
1
1464 1344 1224 1136 mA
Burst write operating current I
DD4W
1
1376 1256 1136 1016 mA
Refresh current I
DD5B
1
1696 1656 1616 1576 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
192 192 192 192 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
216 216 216 216 mA
All banks interleaved read current I
DD7
1
2136 2016 1896 1776 mA
Reset current I
DD8
2
208 208 208 208 mA
Notes:
1. One module rank in the active I
DD
; the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
2GB, 4GB, 8GB (x64, DR) 240-Pin DDR3 UDIMM
I
DD
Specifications
PDF: 09005aef837cdd2d
jtf16c256_512_1gx64az.pdf - Rev. I 04/13 EN
13
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© 2008 Micron Technology, Inc. All rights reserved.
