General Description
The MAX15012/MAX15013 high-frequency, 175V half-
bridge, n-channel MOSFET drivers drive high- and low-
side MOSFETs in high-voltage applications. These
drivers are independently controlled and their 35ns typ-
ical propagation delay, from input to output, are
matched to within 2ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities make
these devices suitable for the high-power, high-fre-
quency telecom power converters. A reliable on-chip
bootstrap diode connected between V
DD
and BST
eliminates the need for an external discrete diode.
The MAX15012A/C and MAX15013A/C offer both nonin-
verting drivers (see the Selector Guide). The
MAX15012B/D and MAX15013B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX15012A/B/C/D feature CMOS (V
DD
/2) logic inputs.
The MAX15013A/B/C/D feature TTL logic inputs. The
drivers are available in the industry-standard 8-pin SO
footprint and pin configuration and a thermally
enhanced 8-pin SO package. All devices operate over
the -40°C to +125°C automotive temperature range.
Applications
Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
Features
HIP2100/HIP2101 Pin Compatible (MAX15012A/C
and MAX15013A/C)
Up to 175V Input Operation
8V to 12.6V V
DD
Input Voltage Range
2A Peak Source and Sink Current Drive Capability
35ns Typical Propagation Delay
Guaranteed 8ns Propagation Delay Matching
Between Drivers
Up to 500kHz Switching Frequency
Available in CMOS (V
DD
/2) or TTL Logic-Level
Inputs with Hysteresis
Up to 14V Logic Inputs Independent of Input
Voltage
Low 2.5pF Input Capacitance
Low 70µA Supply Current
Versions Available with Combination of
Noninverting and Inverting Drivers (MAX15012B/D
and MAX15013B/D)
Available in Industry-Standard 8-Pin SO and
Thermally Enhanced SO Packages
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
________________________________________________________________ Maxim Integrated Products 1
PART TEMP RANGE
PIN-
PACKAGE
PKG
CODE
MAX15012AASA+ -40°C to +125°C 8 SO S8-5
MAX15012BASA+ -40°C to +125°C 8 SO S8-5
MAX15012CASA+* -40°C to +125°C 8 SO-EP** S8E+14
MAX15012DASA+* -40°C to +125°C 8 SO-EP** S8E+14
Ordering Information
PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE
MAX15012AASA+ Noninverting Noninverting CMOS (V
DD
/2) HIP 2100IB
MAX15012BASA+ Noninverting Inverting CMOS (V
DD
/2)
MAX15012CASA+ Noninverting Noninverting CMOS (V
DD
/2) HIP 2100IB
MAX15012DASA+ Noninverting Inverting CMOS (V
DD
/2)
MAX15013AASA+ Noninverting Noninverting TTL HIP 2101IB
MAX15013BASA+ Noninverting Inverting TTL
MAX15013CASA+ Noninverting Noninverting TTL HIP 2101IB
MAX15013DASA+ Noninverting Inverting TTL
Selector Guide
19-0530; Rev 1; 12/07
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Ordering Information continued at end of data sheet.
+Denotes lead-free package.
*Future product—contact factory for availability.
**EP = Exposed pad.
Pin Configurations and Typical Operating Circuit appear at
the end of data sheet.
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND, unless otherwise noted.)
V
DD
, IN_H, IN_L......................................................-0.3V to +14V
DL...............................................................-0.3V to (V
DD
+ 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (V
DD
+ 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .....1538.5mW
Junction-to-Case Thermal Resistance (
θ
JC
)(Note 1)
8-Pin SO .......................................................................40°C/W
8-Pin SO-EP....................................................................6°C/W
Junction-to-Ambient Thermal Resistance (θ
JA
)(Note 1)
8-Pin SO .....................................................................170°C/W
8-Pin SO-EP..................................................................52°C/W
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
POWER SUPPLIES
Operating Supply Voltage V
DD
(Notes 3 and 4) 8.0
12.6
V
V
DD
Quiescent Supply Current
(No Switching)
I
DD
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V
DD
(for B/D versions)
70
140
µA
V
DD
Operating Supply Current I
DDO
f
SW
= 500kHz, V
DD
= +12V 3 mA
BST Quiescent Supply Current I
BST
IN_H = IN_L = GND (for A/C versions),
IN_H = GND, IN_L = V
DD
(for B/D versions)
15 40 µA
BST Operating Supply Current I
BSTO
f
SW
= 500kHz, V
DD
= V
BST
= +12V 3 mA
UVLO (V
DD
to GND)
UVLO
VDD
V
DD
rising 6.5 7.3 8.0 V
UVLO (BST to HS)
UVLO
BST
BST rising 6.0 6.9 7.8 V
UVLO Hysteresis 0.5 V
LOGIC INPUT
MAX15012_, CMOS (V
DD
/2) version
0.67 x
V
DD
0.55 x
V
DD
Input-Logic High V
IH_
MAX15013_, TTL version 2
1.65
V
MAX15012_, CMOS (V
DD
/2) version
0.4 x
V
DD
0.33 x
V
DD
Input-Logic Low V
IL_
MAX15013_, TTL version 1.4 0.8
V
MAX15012_, CMOS (V
DD
/2) version 1.6
Logic-Input Hysteresis V
HYS
MAX15013_, TTL version
0.25
V
*Per JEDEC 51 Standard Multilayer board.
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JE5D51-7, using a four-
layer board. For detailed information on package thermal considerations, see www.maxim-ic.com/thermal-tutorial
.
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
IN_L
= V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
V
IN_H
= 0V
Logic-Input Current I
_IN
V
IN_L
= 0V for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
-1
+0.001
+1 µA
IN_H to GND
IN_L to V
DD
for MAX15012B/MAX15012D/
MAX15013B/MAX15013D
Input Resistance R
IN
IN_L to GND for MAX15012A/MAX15012C/
MAX15013A/MAX15013C
1MΩ
Input Capacitance C
IN
2.5 pF
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
V
HS_MAX
V
DD
10.5V (Note 4)
175
V
BST Maximum Voltage
V
BST_MAX
V
DD
10.5V (Note 4)
189
V
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_HP
V
DD
= 12V, I
DH
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_HN
V
DD
= 12V, I
DH
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
DH Reverse Current (Latchup
Protection)
(Note 5)
400
mA
Power-Off Pulldown Clamp
Voltage
V
BST
= 0V or floating, I
DH
= 1mA (sinking) 0.94 1.16
V
Peak Output Current (Sourcing) C
L
= 10nF, V
DH
= 0V 2 A
Peak Output Current (Sinking)
I
DH_PEAK
C
L
= 10nF, V
DH
= 12V 2 A
LOW-SIDE GATE DRIVER
T
A
= +25°C 2.5 3.3
Driver Output Resistance
(Sourcing)
R
ON_LP
V
DD
= 12V, I
DL
= 100mA
(sourcing)
T
A
= +125°C 3.5 4.6
Ω
T
A
= +25°C 2.1 2.8
Driver Output Resistance
(Sinking)
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sinking)
T
A
= +125°C 3.2 4.2
Ω
Reverse Current at DL (Latchup
Protection)
(Note 5)
400
mA
Power-Off Pulldown Clamp
Voltage
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
0.95 1.16
V
Peak Output Current (Sourcing) I
PK_LP
C
L
= 10nF, V
DL
= 0V 2 A
Peak Output Current (Sinking) I
PK_LN
C
L
= 10nF, V
DL
= 12V 2 A
Forward Voltage Drop V
F
I
BST
= 100mA
0.91 1.11
V
Turn-On and Turn-Off Time t
R
I
BST
= 100mA 40 ns

MAX15013AASA+T

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 175V/2A High-Speed Half-B MOSFET Drvr
Lifecycle:
New from this manufacturer.
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