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MAX15013AASA+T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
4 _______________________________________________________________________________________
Note 2: All devices are 100% tested at T
A
= +125°C. Limits over temperature are guaranteed by design.
Note 3: Ensure that the V
DD
-to-GND or BST-to-HS transient voltage does not exceed 13.2V.
Note 4: Maximum operating supply voltage (V
DD
) reduces linearly from 12.6V to 10.5V with its maximum voltage (V
HS_MAX
) increasing
from 125V to 175V. See the Typical Operating Characteristics and Applications Information sections.
Note 5: Guaranteed by design, not production tested.
Note 6: See the Minimum Input Pulse Width section.
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, T
A
= T
J
= -40°C to +125°C, unless otherwise noted. Typical values are at V
DD
=
V
BST
= +12V and T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
= V
BST
= +12V)
C
L
= 1000pF 7
C
L
= 5000pF 33
Rise Time t
R
C
L
= 10,000pF 65
ns
C
L
= 1000pF 7
C
L
= 5000pF 33Fall Time t
F
C
L
= 10,000pF 65
ns
CMOS 30 55
Turn-On Propagation Delay Time
t
D_ON
Figure 1, C
L
= 1000pF
(Note 5)
TTL 35 63
ns
CMOS 30 55
Turn-Off Propagation Delay Time
t
D_OFF
Figure 1, C
L
= 1000pF
(Note 5)
TTL 35 63
ns
Delay Matching Between Driver-
Low and Driver-High
t
MATCH
C
L
= 1000pF, Figure 1 (Note 5) 2 8 ns
Internal Nonoverlap 1ns
V
DD
= V
BST
= 12V
135
Minimum Pulse Width Input Logic
(Note 6)
t
PW-min
V
DD
= V
BST
= 8V
170
ns
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
_______________________________________________________________________________________ 5
UNDERVOLTAGE LOCKOUT
(V
DD
AND V
BST
RISING) vs. TEMPERATURE
MAX15012/13 toc01
TEMPERATURE (°C)
UVLO (V)
1109565 80-10 5 20 35 50-25
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.3
7.4
7.5
6.5
-40 125
UVLO
VDD
UVLO
BST
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
MAX15012/13 toc02
TEMPERATURE (°C)
UVLO HYSTERESIS (V)
1109565 80-10 5 20 35 50-25
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
-40 125
UVLO
BST
HYSTERESIS
UVLO
VDD
HYSTERESIS
I
DD
vs. V
DD
MAX15012/13 toc03
4ms/div
V
DD
2V/div
I
DD
50μA/div
0μA
0V
IN_H = GND
IN_L = V
DD
I
DDO
+ I
BSTO
vs. V
DD
(f
SW
= 250kHz)
MAX15012/13 toc04
V
DD
(V)
I
DDO
+
I
BSTO
(mA)
1210 11345678912
1.0
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0
013
0
60
40
20
80
100
120
140
160
180
200
0.5 0.70.6 0.8 0.9 1.0 1.1
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
MAX15012/13 toc05
V
DD
- V
BST
(V)
I
DIODE
(mA)
T
A
= +125°C
T
A
= +25°C
T
A
= 0°C
T
A
= -40°C
0
60
40
20
80
100
120
140
160
0426
8
10 12
V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
MAX15012/13 toc06
V
DD
(V)
I
DD
(μA)
T
A
= -40°C
T
A
= +25°C
V
DD
= V
BST
V
HS
= GND
IN_H = GND
IN_L = V
DD
T
A
= +125°C
0
6
3
9
12
15
18
21
0426810153 7 9 1112131415
BST QUIESCENT CURRENT
vs. BST VOLTAGE
MAX15012/13 toc07
V
BST
(V)
I
BST
(μA)
V
BST
= V
DD
+ 1V,
NO SWITCHING
T
A
= +125°C
T
A
= -40°C, T
A
= 0°C, T
A
= +25°C
Typical Operating Characteristics
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
MAX15012/MAX15013
175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
6 _______________________________________________________________________________________
V
DD
AND BST OPERATING SUPPLY
CURRENT vs. FREQUENCY
MAX15012/13 toc08
FREQUENCY (kHz)
I
DDO
+ I
BSTO
(mA)
900700 800200 300 400 500 600100
1
2
3
4
5
6
7
8
9
10
0
0 1000
C
L
= 0
DH OR DL OUTPUT LOW VOLTAGE
vs. TEMPERATURE
MAX15012/13 toc09
TEMPERATURE (°C)
OUTPUT LOW VOLTAGE (V)
1109565 80-10 5 20 35 50-25
0.12
0.14
0.16
0.18
0.20
0.24
0.28
0.32
0.34
0.22
0.26
0.30
0.10
-40 125
SINKING 100mA
DH OR DL FALL TIME
vs. TEMPERATURE (C
LOAD
= 10nF)
MAX15012/13 toc12
TEMPERATURE (°C)
t
F
(ns)
1109565 80-10 5 20 35 50-25
10
20
30
40
50
70
110
100
90
120
60
80
0
-40 125
V
DD
= V
BST
= 8V
V
DD
= V
BST
= 12V
DH OR DL RISE PROPAGATION DELAY
vs. TEMPERATURE
MAX15012/13 toc13
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
1109565 80-10 5 20 35 50-25
5
10
15
20
25
35
55
60
30
45
50
40
0
-40 125
DH
DL
PEAK DH AND DL
SOURCE/SINK CURRENT
MAX15012/13 toc10
1μs/div
DH OR DL
5V/div
SINK AND SOURCE
CURRENT
2A/div
C
L
= 100nF
DH OR DL RISE TIME
vs. TEMPERATURE (C
L
= 10nF)
MAX15012/13 toc11
TEMPERATURE (°C)
t
R
(ns)
1109565 80-10 5 20 35 50-25
12
24
36
48
60
84
108
120
72
96
0
-40 125
V
DD
= V
BST
= 8V
V
DD
= V
BST
= 12V
Typical Operating Characteristics (continued)
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

MAX15013AASA+T

Mfr. #:
Buy MAX15013AASA+T
Manufacturer:
Maxim Integrated
Description:
Gate Drivers 175V/2A High-Speed Half-B MOSFET Drvr
Lifecycle:
New from this manufacturer.
Delivery:
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