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TISP4395H3BJR-S

P1-P3P4-P6P7-P9P10-P12P13-P13
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Parameter
I
TSP
A
I
TSM
A
di/dt
A/µs
Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront
Value 500 300 250 200 160 100 60 400
TISP4xxxH3BJ Overvoltage Protector Series
TISP4070H3BJ THRU TISP4115H3BJ,
TISP4125H3BJ THRU TISP4220H3BJ,
TISP4240H3BJ THRU TISP4400H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Summary Current Ratings
Summary Electrical Characteristics
This TISP
®
device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The
TISP4xxxH3BJ is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These
protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950,
IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350H3BJ meets the FCC Part 68 “B” ringer voltage requirement and survives the Type A and
B impulse tests. These devices are housed in a surface mount SMB (DO-214AA) package.
TISP4xxxH3BJ Overview
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
*
R
o
H
S
C
O
M
P
L
I
A
N
T
Part #
V
DRM
V
V
(BO)
V
V
T
@ I
T
V
I
DRM
µA
I
(BO)
mA
I
T
A
I
H
mA
C
o
@ -2 V
pF
Functionally
Replaces
TISP4070H3 58 70 3 5 600 5 150 120 P0640SC†
TISP4080H3 65 80 3 5 600 5 150 120 P0720SC†
TISP4095H3 75 95 3 5 600 5 150 120 P0900SC†
TISP4115H3 90 115 3 5 600 5 150 120 P1100SC†
TISP4125H3 100 125 3 5 600 5 150 65
TISP4145H3 120 145 3 5 600 5 150 65 P1300SC†
TISP4165H3 135 165 3 5 600 5 150 65
TISP4180H3 145 180 3 5 600 5 150 65 P1500SC
TISP4200H3 155 200 3 5 600 5 150 65
TISP4220H3 160 220 3 5 600 5 150 65 P1800SC
TISP4240H3 180 240 3 5 600 5 150 55
TISP4250H3 190 250 3 5 600 5 150 55 P2300SC†
TISP4265H3 200 265 3 5 600 5 150 55
TISP4290H3 220 290 3 5 600 5 150 55 P2600SC†
TISP4300H3 230 300 3 5 600 5 150 55
TISP4350H3 275 350 3 5 600 5 150 55 P3100SC
TISP4395H3 320 395 3 5 600 5 150 55 P3500SC
TISP4400H3 300 400 3 5 600 5 150 55
† Bourns part has an improved protection voltage
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
T
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
Device Symbol
Device
V
DRM
V
V
(BO)
V
‘4070 58 70
‘4080 65 80
‘4095 75 95
‘4115 90 115
‘4125 100 125
‘4145 120 145
‘4165 135 165
‘4180 145 180
‘4200 155 200
‘4220 160 220
‘4240 180 240
‘4250 190 250
‘4265 200 265
‘4290 220 290
‘4300 230 300
‘4350 275 350
‘4395 320 395
‘4400 300 400
Low Differential Capacitance ...................................67 pF max.
12
T(A)R(B)
MDXXBG
How To Order
SMBJ Package (Top View)
Description
ITU-T K.20/21 Rating . . . . . . . . . . . . . 8 kV 10/700, 200 A 5/310
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
TISP4xxxH3BJ Overvoltage Protector Series
Waveshape Standard
I
TSP
A
2/10 µs GR-1089-CORE 500
8/20 µs IEC 61000-4-5 300
10/160 µs FCC Part 68 250
10/700 µs ITU-T K.20/21 200
10/560 µs FCC Part 68 160
10/1000 µs GR-1089-CORE 100
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
This TISP4xxxH3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices
are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and
holding current values, consult the factory. For lower rated impulse currents in the SMB package, the 50 A 10/1000 TISP4xxxM3BJ series is
available.
............................................... UL Recognized Component
Device Package Carrier
Order As
TISP4xxxH3BJ BJ (J-Bend DO-214AA/SMB)
Embossed Tape Reeled
Bulk Pack
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.
TISP4xxxH3BJR-S
TISP4xxxH3BJ-S
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxH3BJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
V
DRM
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±155
±160
±180
±190
±200
±220
±230
±275
±320
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
I
TSP
A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 200
5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
I
TSM
55
60
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A di
T
/dt 400 A/µs
Junction temperature T
J
-40 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially, the TISP4xxxH3BJ must be in thermal equilibrium with T
J
=25°C.
3. The surge may be repeated after the TISP4xxxH3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient
temperatures above 25 °C.
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
P1-P3P4-P6P7-P9P10-P12P13-P13

TISP4395H3BJR-S

Mfr. #:
Buy TISP4395H3BJR-S
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) 320V
Lifecycle:
New from this manufacturer.
Delivery:
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