NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Electrical Characteristics, T
A
= 25 °C (Unless Otherwise Noted)
TISP4xxxH3BJ Overvoltage Protector Series
Parameter Test Conditions Min. Typ. Max. Unit
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
T
A
= 25 °C
T
A
= 85 °C
±5
±10
µA
V
(BO)
Breakover voltage dv/dt = ±750 V/ms, R
SOURCE
= 300
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±70
±80
±95
±115
±125
±145
±165
±180
±200
±220
±240
±250
±265
±290
±300
±350
±395
±400
V
V
(BO)
Impulse breakover
voltage
dv/dt
≤ ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4070
‘4080
‘4095
‘4115
‘4125
‘4145
‘4165
‘4180
‘4200
‘4220
‘4240
‘4250
‘4265
‘4290
‘4300
‘4350
‘4395
‘4400
±78
±88
±103
±124
±134
±154
±174
±189
±210
±230
±250
±261
±276
±301
±311
±362
±408
±413
V
I
(BO)
Breakover current dv/dt = ±750 V/ms, R
SOURCE
= 300 ±0.15 ±0.6 A
V
T
On-state voltage I
T
= ±5A, t
W
= 100 µs ±3V
I
H
Holding current I
T
= ±5A, di/dt=-/+30mA/ms ±0.15 ±0.6 A
dv/dt
Critical rate of rise of
off-state voltage
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
±5kV/µs
I
D
Off-state current V
D
= ±50 V T
A
= 85 °C ±10 µA
Ω
Ω
