NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP4xxxH3BJ Overvoltage Protector Series
Figure 2. Figure 3.
Figure 4. Figure 5.
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
|I
D
| - Off-State Current - µA
0·001
0·01
0·1
1
10
100
TCHAG
V
D
= ±50 V
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.95
1.00
1.05
1.10
TC4HAF
V
T
- On-State Voltage - V
0.7 1.5 2 3 4 5 7110
I
T
- On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
T
A
= 25 °C
t
W
= 100 µs
TC4HACB
'4240
THRU
'4400
'4070
THRU
'4115
'4125
THRU
'4220
T
J
- Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4HAD
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Typical Characteristics
TISP4xxxH3BJ Overvoltage Protector Series
Figure 6. Figure 7.
V
D
- Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to V
D
= 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T
J
= 25 °C
V
d
= 1 Vrms
TC4HABB
'4125 THRU '4220
'4240 THRU '4400
'4070 THRU '4115
V
DRM
- Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300100
C - Differential Off-State Capacitance - pF
30
35
40
45
50
55
60
65
70
75
C = C
off(-2 V)
- C
off(-50 V)
'4070
'4080
'4095
'4125
'4145
'4165
'4180
'4265
'4300
'4350
'4400
'4200
'4240
'4115
'4220
'4250
'4290
'4395
TCHAEB
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
NOVEMBER 1997 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Rating and Thermal Information
TISP4xxxH3BJ Overvoltage Protector Series
Figure 8. Figure 9.
Figure 10. Figure 11.
t - Current Duration - s
0·1 1 10 100 1000
I
TSM(t)
- Non-Repetitive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
30
10
TI4HAC
V
GEN
= 600 Vrms, 50/60 Hz
R
GEN
= 1.4*V
GEN
/I
TSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25 °C
t - Power Duration - s
0·1 1 10 100 1000
Z
θJA(t)
- Transient Thermal Impedance - °C/W
1.5
2
3
4
5
7
15
20
30
40
50
70
150
1
10
100
TI4HAE
I
TSM(t)
APPLIED FOR TIME t
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
= 25 °C
T
AMIN
- Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00
TI4HADB
'4240 THRU '4440
'4070 THRU '4115
'4125 THRU '4220
T
A
- Ambient Temperature - °C
-40-30-20-100 1020304050607080
Impulse Current - A
90
100
120
150
200
250
300
400
500
600
700
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
BELLCORE 2/10
BELLCORE 10/1000
FCC 10/160
TC4HAA
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
V
DRM
DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
IMPULSE RATING
vs
AMBIENT TEMPERATURE
THERMAL IMPEDANCE
vs
POWER DURATION

TISP4395H3BJR-S

Mfr. #:
Manufacturer:
Bourns
Description:
Thyristor Surge Protection Devices (TSPD) 320V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union