VS-ST103SP Series
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Vishay Semiconductors
Revision: 11-Mar-14
2
Document Number: 94365
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 280 180 440 330 4730 3630
A
400 Hz 310 200 470 300 2500 1850
1000 Hz 320 200 480 310 1530 1090
2500 Hz 340 210 490 320 840 580
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
105 A
85 °C
Maximum RMS on-state current I
T(RMS)
DC at 76 °C case temperature 165
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
3000
t = 8.3 ms 3150
t = 10 ms
100 % V
RRM
reapplied
2530
t = 8.3 ms 2650
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
45
kA
2
s
t = 8.3 ms 41
t = 10 ms
100 % V
RRM
reapplied
32
t = 8.3 ms 29
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 450 kA
2
s
Maximum peak on-state voltage V
TM
I
TM
= 300 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
1.73
V
Low level value of threshold voltage V
T(TO)1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
),
T
J
= T
J
maximum
1.32
High level value of threshold voltage V
T(TO)2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.35
Low level value of forward slope resistance r
t1
(16.7 % x x I
T(AV)
< I < x I
T(AV)
),
T
J
= T
J
maximum
1.40
m
High level value of forward slope
resistance
r
t2
(I > x I
T(AV)
), T
J
= T
J
maximum 1.30
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 , I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned on current
dI/dt T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt 1000 A/μs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5 source
0.80
μs
Maximum turn-off time
minimum
t
q
T
J
= T
J
maximum, I
TM
= 100 A, commutating dI/dt = 10 A/μs
V
R
= 50 V, t
p
= 200 μs, dV/dt: See table in device code
10
maximum 25
180° el
I
TM
100 µs
I
TM
