VS-ST103S08PFL1

VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
4
Document Number: 94365
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
110
100
90
80
130
030
60
90
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
10 40 7020 50 80
120
60°30° 90° 120° 180°
100 110
ST103S Series
R
thJC
(DC) = 0.195 K/W
Ø
Conduction angle
060
120
180
Maximum Allowable Case
Temperature (°C)
Average On-State Current (A)
20 80 14040 100 160
30° 60° 90° 120° 180°
110
100
90
70
130
120
80
Ø
Conduction period
DC
ST103S Series
R
thJC
(DC) = 0.195 K/W
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
030
60
90
10 40 7020 50 80
100 110
180°
120°
90°
60°
30°
RMS limit
Conduction angle
ST083S Series
T
J
= 125 °C
Ø
0
20
40
60
80
100
120
140
160
180
Maximum Average On-state
Power Loss (W)
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
Average On-State Current (A)
0
604020 80
100 120
180°
120°
90°
60°
30°
RMS limit
Conduction angle
ST103S Series
T
J
= 125 °C
DC
200
220
240
260
140 160 180
Ø
0
20
40
60
80
100
120
140
160
180
Maximum Average On-State
Power Loss (W)
200
220
240
260
Maximum Allowable Ambient Temperature (°C)
25 50 75 100 125
0.2 K/W
R
thSA
= 0.1 K/W - ΔR
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
5
Document Number: 94365
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1200
1 10 100
1400
1800
2000
2400
2600
2800
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
ST103S Series
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
2200
1600
At any rated load condition and with
rated V
RRM
applied following surge
1200
0.01 0.1 1
1400
1800
2000
2400
2600
3000
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
ST103S Series
No voltage reapplied
Rated V
RRM
reapplied
2200
1600
2800
Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial T
J
= 125 °C
100
123456
1000
10 000
T
J
= 25 °C
T
J
= 125 °C
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST103S Series
0.01
0.01 0.1 1 100.001
0.1
1
Square Wave Pulse Duration (s)
Z
thJC
- Transient
Thermal Impedance (K/W)
ST103S Series
Steady state value
R
thJC
= 0.195 K/W
(DC operation)
20
2010 30 40 50 60 70 80 90 100
40
60
80
100
120
140
160
ST103S Series
T
J
= 125 °C
dI/dt - Rate of Fall of On-State Current (A/µs)
Q
rr
- Maximum Reverse
Recovery Charge (µC)
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
10
20
30
40
50
60
70
80
90
100
110
120
I
rr
- Maximum Reverse Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
ST103S Series
T
J
= 125 °C
2010 30 40 50 60 70 80 90 100
I
TM
= 500 A
I
TM
= 300 A
I
TM
= 200 A
I
TM
= 100 A
I
TM
= 50 A
VS-ST103SP Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94365
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
t
p
ST103S Series
Sinusoidal pulse
T
C
= 60 °C
50 Hz100200400
1000
2000
5000
10 000
100
10 100 1000 10 000
1000
10000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST103S Series
Sinusoidal pulse
T
C
= 85 °C
50 Hz100200400
1000
2000
500010 000
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST103S Series
Trapezoidal pulse
T
C
= 85 °C
dI/dt = 50 A/µs
t
p
50 Hz
100
200
400
1000
1500
2500
5000
10 100 1000 10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
100
1000
10 000
50 Hz
400
2500
100
1500
200
5000
10 000
1000
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST103S Series
Trapezoidal pulse
T
C
= 85 °C
dI/dt = 100 A/µs
t
p

VS-ST103S08PFL1

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
SCRs Thyristors - TO-83/94 COM RD-e3
Lifecycle:
New from this manufacturer.
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