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BC847BVN,115

P1-P3P4-P6P7-P9
2001 Nov 07 3
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient notes 1 and 2 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current V
CB
= 30 V; I
E
= 0 − − 15 nA
V
CB
= 30 V; I
E
= 0; T
j
= 150 °C − − 5 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 5 V; I
C
= 2 mA 200 − 450
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − − 100 mV
I
C
= 100 mA; I
B
= 5 mA; note 1 − − 300 mV
V
BEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA − 755 − mV
f
T
transition frequency I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz 100 − − MHz
NPN transistor
V
BE
base-emitter turn-on voltage V
CE
= 5 V; I
C
= 2 mA 580 655 700 mV
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1MHz − − 1.5 pF
C
e
emitter capacitance V
EB
= 500 mV; I
C
= I
c
= 0; f = 1MHz − 11 − pF
PNP transistor
V
BE
base-emitter turn-on voltage V
CE
= −5 V; I
C
= −2 mA 600 655 750 mV
C
c
collector capacitance V
CB
= −10 V; I
C
= I
c
= 0; f = 1MHz − − 2.2 pF
C
e
emitter capacitance V
EB
= −500 mV; I
E
= I
e
= 0; f = 1MHz − 10 − pF
2001 Nov 07 4
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
handbook, halfpage
0
400
600
200
MLD703
10
−1
110
I
C
(mA)
h
FE
10
2
10
3
(1)
(3)
(2)
Fig.2 DC current gain as a function of collector
current: typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD704
10
−2
10
−1
1
I
C
(mA)
V
BE
mV
10 10
2
10
3
(3)
(2)
(1)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); V
CE
= 5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
10
4
10
3
10
2
10
MLD705
10
−1
110
I
C
(mA)
V
CEsat
(mV)
10
2
10
3
(2)
(1)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current: typical values.
TR1 (NPN); I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD706
110
−1
I
C
(mA)
V
BEsat
(mV)
10 10
2
10
3
(1)
(3)
(2)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
TR1 (NPN); I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
2001 Nov 07 5
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistor BC847BVN
handbook, halfpage
0
1000
200
400
600
800
MLD699
−10
−2
−10
−1
(1)
−1
I
C
(mA)
h
FE
−10 −10
2
−10
3
(2)
(3)
Fig.6 DC current gain as a function of collector
current: typical values.
TR2 (PNP); V
CE
= −5 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLD700
−10
−2
−10
−1
(1)
−1
I
C
(mA)
V
BE
mV
−10 −10
2
−10
3
(3)
(2)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
TR2 (PNP); V
CE
= −5 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
handbook, halfpage
−10
4
−10
3
−10
2
−10
MLD701
−10
−1
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
(1)
(2)
(3)
Fig.8 Collector-emitter saturation voltage as a
function of collector current: typical values.
TR2 (PNP); I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−200
−1200
−400
−600
−800
−1000
MLD702
−1−10
−1
I
C
(mA)
V
BEsat
(mV)
−10 −10
2
−10
3
(1)
(3)
(2)
Fig.9 Base-emitter saturation voltage as a
function of collector current.
TR2 (PNP); I
C
/I
B
= 20.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
P1-P3P4-P6P7-P9

BC847BVN,115

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Buy BC847BVN,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
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