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MT18HTF6472DY-53EB2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18
Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
1 ©2003 Micron Technology, Inc. All rights reserved.
DDR2 SDRAM Registered DIMM (RDIMM)
MT18HTF6472(P)D – 512MB
MT18HTF12872(P)D – 1GB
MT18HTF25672(P)D – 2GB
For component data sheets, refer to Micron’s Web site: www.micron.com
Features
• 240-pin, registered dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
PC2-5300, or PC2-6400
• 512MB (64 Meg x 72), 1GB (128 Meg x 72),
2GB (256 Meg x 72)
• Supports ECC error detection and correction
•V
DD = VDDQ = +1.8V
•V
DDSPD = +1.7V to +3.6V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
•4n-bit prefetch architecture
•Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
Figure 1:
240-Pin DIMM (MO-237 R/C G)
Notes: 1. Contact Micron for industrial temperature
module offerings.
2. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
3. Not available in 512MB module density.
Options Marking
•Parity
P
• Operating temperature
1
– Commercial (0°C ≤ T
A
≤ +70°C)
None
– Industrial (–40°C ≤ T
A
≤ +85°C)
I
•Package
– 240-pin DIMM (Pb-free)
Y
• Frequency/CAS latency
2
– 2.5ns @ CL = 5 (DDR2-800)
3
-80E
– 2.5ns @ CL = 6 (DDR2-800)
3
-800
– 3.0ns @ CL = 5 (DDR2-667)
-667
– 3.75ns @ CL = 4 (DDR2-533)
-53E
– 5.0ns @ CL = 3 (DDR2-400)
-40E
•PCB height
– 30mm (1.18in)
PCB height: 30mm (1.18in)
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)CL = 6 CL = 5 CL = 4 CL = 3
-80E PC2-6400 – 800 533 – 12.5 12.5 55
-800 PC2-6400 800 667 533 – 15 15 55
-667 PC2-5300 – 667 533 400 15 15 55
-53E PC2-4200 – – 533 400 15 15 55
-40E PC2-3200 – – 400 400 15 15 55
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
2 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Features
Notes: 1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HTF12872(P)Y-667D2
.
Table 2: Addressing
512MB 1GB 2GB
Refresh count
8K 8K 8K
Row address
8K (A0–A12) 16K (A0–A13) 16K (A0–A13)
Device bank address
4 (BA0, BA1) 4 (BA0, BA1) 8 (BA0, BA1, BA2)
Device page size per bank
1KB 1KB 1KB
Device configuration
256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8)
Column address
1K (A0–A9) 1K (A0–A9) 1K (A0–A9)
Module rank address
2 (S0#, S1#) 2 (S0#, S1#) 2 (S0#, S1#)
Table 3: Part Numbers and Timing Parameters – 512MB Modules
Base device: MT47H32M8
1
, 256Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL-
t
RCD-
t
RP)
MT18HTF6472(P)DY-667__ 512MB 64 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF6472(P)DY-53E__ 512MB 64 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT18HTF6472(P)DY-40E__ 512MB 64 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 4: Part Numbers and Timing Parameters – 1GB Modules
Base device: MT47H64M8
1
, 512Mb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwidth
Memory Clock/
Data Rate
Latency
(CL-
t
RCD-
t
RP)
MT18HTF12872(P)DY-80E__ 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF12872(P)DY-800__ 1GB 128 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF12872(P)DY-667__ 1GB 128 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF12872(P)DY-53E__ 1GB 128 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT18HTF12872(P)DY-40E__ 1GB 128 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
Table 5: Part Numbers and Timing Parameters – 2GB Modules
Notes appear below; base device: MT47H128M8
1
, 1Gb DDR2 SDRAM
Part Number
2
Module
Density Configuration
Module
Bandwith
Memory Clock/
Data Rate
Latency
(CL-
t
RCD-
t
RP)
MT18HTF25672(P)DY-80E__ 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 5-5-5
MT18HTF25672(P)DY-800__ 2GB 256 Meg x 72 6.2 GB/s 2.5ns/800 MT/s 6-6-6
MT18HTF25672(P)DY-667__ 2GB 256 Meg x 72 5.3 GB/s 3.0ns/667 MT/s 5-5-5
MT18HTF25672(P)DY-53E__ 2GB 256 Meg x 72 4.3 GB/s 3.75ns/533 MT/s 4-4-4
MT18HTF25672(P)DY-40E__ 2GB 256 Meg x 72 3.2 GB/s 5.0ns/400 MT/s 3-3-3
PDF: 09005aef80e935cd/Source: 09005aef80e934a6 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72D.fm - Rev. E 2/07 EN
3 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB (x72, ECC, DR) 240-Pin DDR2 SDRAM RDIMM
Pin Assignments and Descriptions
Pin Assignments and Descriptions
Notes: 1. Pin 54 is NC for 512MB and 1GB, or BA2 for 2GB.
2. Pin 55 is NC for non-parity and E
RR_OUT for parity.
3. Pin 68 is NC for non-parity and P
AR_IN for parity.
4. Pin 196 is NC for 512MB or A13 for 1GB and 2GB.
Table 6: Pin Assignments
240-Pin RDIMM Front 240-Pin RDIMM Back
Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol
1V
REF 31 DQ19 61 A4 91 VSS 121 VSS 151 VSS 181 VDDQ 211 DM5/DQS14
2VSS 32 VSS 62 VDDQ 92 DQS5# 122 DQ4 152 DQ28 182 A3 212 NC/DQS14#
3 DQ0 33 DQ24 63 A2 93 DQS5 123 DQ5 153 DQ29 183 A1 213 V
SS
4 DQ1 34 DQ25 64 VDD 94 VSS 124 VSS 154 VSS 184 VDD 214 DQ46
5VSS 35 VSS 65 VSS 95 DQ42 125 DM0/
DQS9
155 DM3/
DQS12
185 CK0 215 DQ47
6 DQS0# 36 DQS3# 66 V
SS 96 DQ43 126 NC/
DQS9#
156 NC/
DQS12#
186 CK0# 216 VSS
7 DQS0 37 DQS3 67 VDD 97 VSS 127 VSS 157 VSS 187 VDD 217 DQ52
8V
SS 38 VSS 68
3
NC/
PAR_IN
98 DQ48 128 DQ6 158 DQ30 188 A0 218 DQ53
9 DQ2 39 DQ26 69 V
DD 99 DQ49 129 DQ7 159 DQ31 189 VDD 219 VSS
10 DQ3 40 DQ27 70 A10/AP 100 VSS 130 VSS 160 VSS 190 BA1 220 RFU
11 VSS 41 VSS 71 BA0 101 SA2 131 DQ12 161 CB4 191 VDDQ 221 RFU
12 DQ8 42 CB0 72 V
DDQ 102 NC 132 DQ13 162 CB5 192 RAS# 222 VSS
13 DQ9 43 CB1 73 WE# 103 VSS 133 VSS 163 VSS 193 S0# 223 DM6/DQS15
14 VSS 44 VSS 74 CAS# 104 DQS6# 134 DM1/
DQS10
164 DM8/
DQS17
194 VDDQ 224 NC/DQS15#
15 DQS1# 45 DQS8# 75 V
DDQ105DQS6 135 NC/
DQS10#
165 NC/
DQS17#
195 ODT0 225 VSS
16 DQS1 46 DQS8 76 S1# 106 VSS 136 VSS 166 VSS 196
4
NC/A13 226 DQ54
17 V
SS 47 VSS 77 ODT1 107 DQ50 137 RFU 167 CB6 197 VDD 227 DQ55
18 RESET# 48 CB2 78 V
DDQ 108 DQ51 138 RFU 168 CB7 198 VSS 228 VSS
19 NC 49 CB3 79 VSS 109 VSS 139 VSS 169 VSS 199 DQ36 229 DQ60
20 V
SS 50 VSS 80 DQ32 110 DQ56 140 DQ14 170 VDDQ 200 DQ37 230 DQ61
21 DQ10 51 V
DDQ 81 DQ33 111 DQ57 141 DQ15 171 CKE1 201 VSS 231 VSS
22 DQ11 52 CKE0 82 VSS 112 VSS 142 VSS 172 VDD 202 DM4/
DQS13
232 DM7/DQS16
23 V
SS 53 VDD 83 DQS4# 113 DQS7# 143 DQ20 173 NC 203 NC/
DQS13#
233 NC/DQS16#
24 DQ16 54
1
NC/BA2 84 DQS4 114 DQS7 144 DQ21 174 NC 204 VSS 234 VSS
25 DQ17 55
2
NC/
E
RR_OUT
85 VSS 115 VSS 145 VSS 175 VDDQ 205 DQ38 235 DQ62
26 V
SS 56 VDDQ 86 DQ34 116 DQ58 146 DM2/
DQS11
176 A12 206 DQ39 236 DQ63
27 DQS2# 57 A11 87 DQ35 117 DQ59 147 NC/
DQS11#
177 A9 207 V
SS 237 VSS
28 DQS2 58 A7 88 VSS 118 VSS 148 VSS 178 VDD 208 DQ44 238 VDDSPD
29 VSS 59 VDD 89 DQ40 119 SDA 149 DQ22 179 A8 209 DQ45 239 SA0
30 DQ18 60 A5 90 DQ41 120 SCL 150 DQ23 180 A6 210 V
SS 240 SA1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18

MT18HTF6472DY-53EB2

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Buy MT18HTF6472DY-53EB2
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 512MB 240RDIMM
Lifecycle:
New from this manufacturer.
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