©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
Data Sheet
www.microchip.com
16 Mbit (x16) Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Features
Organized as 1M x16
Single Voltage Read and Write Operations
1.65-1.95V
Superior Reliability
Endurance: 100,000 Cycles (Typical)
Greater than 100 years Data Retention
Low Power Consumption (typical values at 5 MHz)
Active Current: 5 mA (typical)
Standby Current: 5 µA (typical)
Auto Low Power Mode: 5 µA (typical)
Hardware Block-Protection/WP# Input Pin
Top Block-Protection (top 32 KWord)
for SST39WF1602
Bottom Block-Protection (bottom 32 KWord)
for SST39WF1601
Sector-Erase Capability
Uniform 2 KWord sectors
Block-Erase Capability
Uniform 32 KWord blocks
Chip-Erase Capability
Erase-Suspend/Erase-Resume Capabilities
Hardware Reset Pin (RST#)
Security-ID Feature
SST: 128 bits; User: 128 bits
Fast Read Access Time:
–70ns
Latched Address and Data
Fast Erase and Word-Program:
Sector-Erase Time: 36 ms (typical)
Block-Erase Time: 36 ms (typical)
Chip-Erase Time: 140 ms (typical)
Word-Program Time: 28 µs (typical)
Automatic Write Timing
Internal V
PP
Generation
End-of-Write Detection
Toggle Bits
Data# Polling
CMOS I/O Compatibility
JEDEC Standard
Flash EEPROM Pin Assignments and
Command Sets
Packages Available
48-ball TFBGA (6mm x 8mm)
48-ball WFBGA (4mm x 6mm)
All devices are RoHS compliant
AEC-Q100-qualified devices a vailab le
The SST39WF1601 / SST39WF1602 are a 1M x16 CMOS Multi-Purpose Flash
Plus (MPF+) devices manufactured with proprietary, high-performance CMOS
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-
tor attain better reliability and manufacturability compared with alternate
approaches. The SST39WF1601 / SST39WF1602 write (Program or Erase) with
a 1.65-1.95V power supply. These devices conform to JEDEC standard pin
assignments for x16 memories.
©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
2
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Product Description
The SST39WF1601/1602 devices are 1M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured
with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-
oxide tunneling injector attain better reliability and manufacturability compared with alternate
approaches. The SST39WF1601/1602 write (Program or Erase) with a 1.65-1.95V power supply.
These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39WF1601/1602 devices provide a typical Word-
Program time of 28 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of
Program operation. To protect against inadvertent write, they have on-chip hardware and Software
Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications,
these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
The SST39WF1601/1602 devices are suited for applications that require convenient and economical
updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39WF1601/1602 are offered in both 48-ball
TFBGA and 48-ball WFBGA packages. See Figures 2 and 3 for pin assignments.
©2013 Silicon Storage Technology, Inc. DS-20005014B 11/2013
3
16 Mbit Multi-Purpose Flash Plus
SST39WF1601 / SST39WF1602
Data Sheet
Block Diagram
Figure 1: Functional Block Diagram
Y-Decoder
I/O Buffers and Data Latches
1297 B1.0
Address Buffer Latches
X-Decoder
DQ
15
-DQ
0
Memory Address
OE#
CE#
WE#
SuperFlash
Memory
Control Logic
WP#
RESET#

SST39WF1601-70-4I-MAQE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash 1.65V to 1.95V 16Mbit Multi-Prps Fl
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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